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參數(shù)資料
| 型號： | 934057018127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 301K |
| 代理商： | 934057018127 |
Philips Semiconductors
BUK95/9609-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 21 February 2002
5 of 14
9397 750 09229
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
-
V
Tj = 55 °C50
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS = 55 V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
-
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25A;
Tj =25 °C
-
7.6
9
m
Tj = 175 °C-
-
18
m
VGS = 4.5 V; ID =25A
-
10
m
VGS =10V; ID = 25 A
-
6.4
8
m
Dynamic characteristics
Qg(tot)
total gate charge
VGS =5V; VDD =44V;
-60
-
nC
Qgs
gate-to-source charge
-
9
-
nC
Qgd
gate-to-drain (Miller) charge
-
29
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
-
3475
4633
pF
Coss
output capacitance
-
570
682
pF
Crss
reverse transfer capacitance
-
360
493
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
-33
-
ns
tr
rise time
-
149
-
ns
td(off)
turn-off delay time
-
197
-
ns
tf
fall time
-
131
-
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
-
4.5
-
nH
from contact screw on
mounting base to centre of
die SOT78
-
3.5
-
nH
from upper edge of drain
mounting base to centre of
die SOT404
-
2.5
-
nH
Ls
internal source inductance
from source lead to source
bond pad
-
7.5
-
nH
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