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| 型號(hào)： | 934057018127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 8/14頁(yè) |
| 文件大?。?/td> | 301K |
| 代理商： | 934057018127 |
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Philips Semiconductors
BUK95/9609-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 21 February 2002
3 of 14
9397 750 09229
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Continuous drain current as a function of
mounting base temperature.
Tmb =25 °C; IDM single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03na19
0
40
80
120
0
50
100
150
200
Tmb (°C)
Pder
(%)
03nh27
0
40
80
120
0
50
100
150
200
Tmb (°C)
ID
(A)
capped at 75 A due to package
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
03nh25
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
1 ms
tp = 10 s
100 s
capped at 75 A due to package
Limit RDSon = VDS/ID
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