參數(shù)資料
型號(hào): 934057021118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, D2PAK-3
文件頁數(shù): 12/14頁
文件大?。?/td> 265K
代理商: 934057021118
Philips Semiconductors
PHP/PHB/PHD63NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 14 June 2002
7 of 14
9397 750 09822
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS =0V;f=1MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03ai29
0
0.8
1.6
2.4
3.2
-60
0
60
120
180
Tj (°C)
VGS(th)
(V)
min
typ
max
03ai28
10-6
10-5
10-4
10-3
10-2
10-1
0
0.8
1.6
2.4
3.2
VGS(V)
ID
(A)
typ
max
min
03ai89
10
102
103
104
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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