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參數(shù)資料
| 型號(hào)： | 934057021118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 265K |
| 代理商： | 934057021118 |
Philips Semiconductors
PHP/PHB/PHD63NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 14 June 2002
2 of 14
9397 750 09822
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3.
Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 175 °C
-
30
V
VDGR
drain-gate voltage (DC)
25
°C ≤ T
j ≤ 175 °C; RGS =20k
-30
V
VGS
gate-source voltage (DC)
-
±20
V
VGSM
peak gate-source voltage
tp ≤ 50 s; pulsed; duty cycle = 25 %
-
±25
V
ID
drain current (DC)
-
68.9
A
-
48.7
A
IDM
peak drain current
-
240
A
Ptot
total power dissipation
-
111
W
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
68.9
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
-
48.7
A
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