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參數(shù)資料
| 型號： | 934057030118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 333K |
| 代理商： | 934057030118 |
Philips Semiconductors
PHB/PHD101NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 25 February 2003
5 of 13
9397 750 10929
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
30
--V
Tj = 55 °C
27
--V
VGS(th)
gate-source threshold voltage
Tj =25 °C
1
1.9
2.5
V
Tj = 175 °C
0.6
-
V
Tj = 55 °C
-
2.9
V
IDSS
drain-source leakage current
VDS =30V; VGS =0V
Tj =25 °C
-
0.05
1
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
-
5.8
7
m
Tj = 175 °C
-
10.5
12.6
m
Tj =25 °C
-
4.5
5.5
m
Dynamic characteristics
Qg(tot)
total gate charge
-23
-
nC
Qgs
gate-source charge
-
10.5
-
nC
Qgd
gate-drain (Miller) charge
-
8
-
nC
Ciss
input capacitance
-
2180 -
pF
Coss
output capacitance
-
600
-
pF
Crss
reverse transfer capacitance
-
225
-
pF
td(on)
turn-on delay time
VDD =15V; ID = 25 A; VGS = 4.5 V;
RG = 5.6 ; resistive load
-23
-
ns
tr
rise time
-90
-
ns
td(off)
turn-off delay time
-
37
-
ns
tf
fall time
-33
-
ns
Source-drain diode
VSD
-
0.85
1.2
V
trr
reverse recovery time
IS = 10 A; dIS/dt = 100 A/s; VGS =0V
-
37
-
ns
Qr
recovered charge
-
33
-
nC
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