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參數(shù)資料
| 型號： | 934057030118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 333K |
| 代理商： | 934057030118 |
Philips Semiconductors
PHB/PHD101NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 25 February 2003
2 of 13
9397 750 10929
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25
≤ T
j ≤ 175 °C
-
30
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-
75
A
Ptot
total power dissipation
Tmb =25 °C
-
166
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS = 10 V; ID = 25 A
4.5
5.5
m
Tj =25 °C; VGS =5V; ID = 25 A
5.8
7.0
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
≤ Tj ≤ 175 °C
-
30
V
VDGR
drain-gate voltage (DC)
25
≤ Tj ≤ 175 °C; RGS =20k
-30
V
VGS
gate-source voltage (DC)
-
±20
V
VGSM
gate-source voltage
tp ≤ 50 s; pulsed;
duty cycle 25%; Tj ≤ 150 °C
-
±25
V
ID
drain current (DC)
-75
A
-75
A
IDM
peak drain current
-
240
A
Ptot
total power dissipation
-
166
W
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
75
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
-
240
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID =43A;
tp = 0.19 ms; VDD ≤ 15 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C
-
185
mJ
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