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參數(shù)資料
| 型號： | 934057041118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大小： | 279K |
| 代理商： | 934057041118 |
Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 26 April 2002
8 of 13
9397 750 09156
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °C and 175 °C; VGS =0V
ID = 75 A; VDD = 48 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ah86
0
20
40
60
80
100
0.0
0.5
1.0
1.5
VSD (V)
IS
(A)
Tj = 25 C
175 C
VGS = 0 V
03ah88
0
2
4
6
8
10
12
0
50
100
150
200
QG (nC)
VGS
(V)
ID = 75 A
Tj = 25 C
VDD = 48 V
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