- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24763 > 934057041118 (NXP SEMICONDUCTORS) 75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 934057041118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 279K |
| 代理商： | 934057041118 |
Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 26 April 2002
2 of 13
9397 750 09156
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 175 °C
-
60
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
-
75
A
Ptot
total power dissipation
Tmb =25 °C
-
230
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj =25 °C
3.1
3.6
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ Tj ≤ 175 °C
-
60
V
VDGR
drain-gate voltage (DC)
25
°C ≤ Tj ≤ 175 °C; RGS =20k
-60
V
VGS
gate-source voltage (DC)
-
±20
V
VGSM
gate-source voltage
tp ≤ 50 s; pulsed;
duty cycle 25%; Tj ≤ 150 °C
-
±30
V
ID
drain current (DC)
-75
A
-75
A
IDM
peak drain current
-
400
A
Ptot
total power dissipation
-
230
W
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC) Tmb =25 °C
-
75
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp
-
400
A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy
unclamped inductive load;
ID =75A;tp = 0.1 ms; VDD =15V;
RGS =50 ; VGS = 10 V; starting Tj =25 °C
-
500
mJ
IDS(AL)S
non-repetitive avalanche current
unclamped inductive load;
VDD =15V;RGS =50 ; VGS =10V;
starting Tj =25 °C
-75
A
相關PDF資料 |
PDF描述 |
|---|---|
| 934057040127 | 75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934057047115 | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 934057048115 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 934057050115 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 934057049115 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 934057052116 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052126 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052412 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057053135 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057054412 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
發(fā)布緊急采購，3分鐘左右您將得到回復。