參數資料
型號： 934057073115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 1800 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-6
文件頁數： 10/15頁
文件大小： 140K
代理商： 934057073115
2003 Jan 30
4
Philips Semiconductors
Product specication
40 V low VCEsat PNP transistor
PBSS5240V
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 40 V; IE =0
100
nA
VCB = 40 V; IE = 0; Tamb = 150 °C
50
A
ICEO
collector-emitter cut-off current
VCE = 30 V; IB =0
100
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC =0
100
nA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
300
VCE = 5 V; IC = 100 mA
300
800
VCE = 5 V; IC = 500 mA
250
VCE = 5 V; IC = 1 A
160
VCE = 5 V; IC = 2 A; note 1
50
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 1mA
80
120
mV
IC = 500 mA; IB = 50 mA
100
145
mV
IC = 1 A; IB = 100 mA; note 1
180
250
mV
IC = 2 A; IB = 200 mA
370
530
mV
RCEsat
equivalent on-resistance
IC = 1 A; IB = 100 mA; note 1
180
<250
m
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 100 mA
1.1
V
VBEon
base-emitter turn-on voltage
VCE = 5 V; IC = 1A
1V
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
150
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0; f = 1 MHz
12
pF
相關PDF資料
PDF描述
934057074115 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0620120000 MK 6/6,6 POLE,KRG,BN RoHS Compliant: Yes
0620220000 41 A, STRIP TERMINAL BLOCK, 2 ROWS, 1 DECK
934057076118 63 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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相關代理商/技術參數
參數描述
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