參數(shù)資料
型號(hào)： 934057073115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 1800 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-6
文件頁(yè)數(shù)： 9/15頁(yè)
文件大小： 140K
代理商： 934057073115
2003 Jan 30
3
Philips Semiconductors
Product specication
40 V low VCEsat PNP transistor
PBSS5240V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
2. Operated under pulsed conditions: duty cycle
δ≤ 20%, pulse width tp ≤ 30 ms.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
3. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
4. Operated under pulsed conditions: duty cycle
δ≤ 20%, pulse width tp ≤ 30 ms.
Soldering
The only recommended soldering method is reflow soldering.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
note 1
1.8
A
ICRP
peak repetitive collector current
note 2
2A
ICM
peak collector current
3A
IB
base current (DC)
300
mA
IBM
peak base current
1A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 3
300
mW
Tamb ≤ 25 °C; note 4
500
mW
Tamb ≤ 25 °C; note 1
900
mW
Tamb ≤ 25 °C; notes 2 and 3
1.2
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
note 1
410
K/W
note 2
215
K/W
note 3
140
K/W
notes 1 and 4
110
K/W
相關(guān)PDF資料
PDF描述
934057074115 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0620120000 MK 6/6,6 POLE,KRG,BN RoHS Compliant: Yes
0620220000 41 A, STRIP TERMINAL BLOCK, 2 ROWS, 1 DECK
934057076118 63 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
934057079115 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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