參數(shù)資料
型號(hào): 934057076118
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: 63 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: PLASTIC, SMD, SC-63, DPAK-3
文件頁(yè)數(shù): 6/12頁(yè)
文件大小: 281K
代理商: 934057076118
Philips Semiconductors
BUK9214-30A
TrenchMOS logic level FET
Product data
Rev. 01 — 20 March 2002
3 of 12
9397 750 09373
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Continuous drain current as a function of
mounting base temperature.
Tmb =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
oC)
(%)
Pder
03nh79
0
20
40
60
80
25
50
75
100
125
150
175
200
Tmb (C)
ID
(A)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
03nh78
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
RDSon = VDS / ID
1 ms
tp = 10 s
100 s
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