參數(shù)資料
型號： 934057076118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 63 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： PLASTIC, SMD, SC-63, DPAK-3
文件頁數(shù)： 8/12頁
文件大小： 281K
代理商： 934057076118
Philips Semiconductors
BUK9214-30A
TrenchMOS logic level FET
Product data
Rev. 01 — 20 March 2002
5 of 12
9397 750 09373
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C30
-
V
Tj = 55 °C27
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS = 30 V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
-
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25A;
Tj =25 °C
-
11
14
m
Tj = 175 °C
-
26.6
m
VGS = 4.5 V; ID = 25 A;
-
15.5
m
VGS =10V; ID = 25 A;
-
9
12
m
Dynamic characteristics
Qg(tot)
total gate charge
VGS =5V;VDD =24V;
ID =25A; Figure 14
-31
-
nC
Qgs
gate-to-source charge
-
5.3
-
nC
Qgd
gate-to-drain (Miller) charge
-
12.2
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
-
1730
2317
pF
Coss
output capacitance
-
400
481
pF
Crss
reverse transfer capacitance
-
260
365
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10 ;
-10
-
ns
tr
rise time
-
85
-
ns
td(off)
turn-off delay time
-
94
-
ns
tf
fall time
-
108
-
ns
Ld
internal drain inductance
from drain to centre of die
-
2.5
-
nH
Ls
internal source inductance
from source lead to source
bond pad
-
7.5
-
nH
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