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參數(shù)資料
| 型號： | 935061570112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 門電路 |
| 英文描述： | LV/LV-A/LVX/H SERIES, HEX 1-INPUT INVERT GATE, PDSO14 |
| 封裝： | 3.90 MM, PLASTIC, SOT-108-1, SO-14 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 154K |
| 代理商： | 935061570112 |
Philips Semiconductors
Product specification
74LVU04
Hex inverter
2
2001 Jan 11
853–1918 25393
FEATURES
Wide operating voltage: 1.0 to 5.5 V
Optimized for Low Voltage applications: 1.0 to 3.6 V
Typical V
OLP (output ground bounce) < 0.8 V at VCC = 3.3 V,
Tamb = 25 °C.
Typical V
OHV (output VOH undershoot) > 2 V at VCC = 3.3 V,
Tamb = 25 °C.
Output capability: standard
I
CC category: SSI
DESCRIPTION
The 74LVU04 is a low-voltage, Si-gate CMOS device and is pin
compatible with the 74HCU04.
The 74LVU04 is a general purpose hex inverter. Each of the six
inverters is a single stage with unbuffered outputs.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 2.5 ns
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
tPHL/tPLH
Propagation delay
nA to nY
CL = 15 pF;
VCC = 3.3 V
6
ns
CI
Input capacitance
3.5
pF
CPD
Power dissipation capacitance per gate
Notes 1, 2
18
pF
NOTES:
1. CPD is used to determine the dynamic power dissipation (PD in W)
PD = CPD × VCC2 × fi + Σ (CL × VCC2 × fo) where:
fi = input frequency in MHz; CL = output load capacitance in pF;
fo = output frequency in MHz; VCC = supply voltage in V;
Σ (CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
PKG. DWG. #
14-Pin Plastic DIL
–40 to +125
°C
74LVU04N
SOT27-1
14-Pin Plastic SO
–40 to +125
°C
74LVU04D
SOT108-1
14-Pin Plastic SSOP Type II
–40 to +125
°C
74LVU04DB
SOT337-1
14-Pin Plastic TSSOP Type I
–40 to +125
°C
74LVU04PW
74LVU04PWDH
SOT402-1
PIN DESCRIPTION
PIN NUMBER
SYMBOL
NAME AND FUNCTION
1, 3, 5, 9, 11, 13
1A – 6A
Data inputs
2, 4, 6, 8, 10, 12
1Y – 6Y
Data outputs
7
GND
Ground (0 V)
14
VCC
Positive supply voltage
FUNCTION TABLE
INPUTS
OUTPUTS
nA
nY
L
H
L
NOTES:
H = HIGH voltage level
L = LOW voltage level
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