參數(shù)資料
型號： 935177130112
廠商： NXP SEMICONDUCTORS
元件分類： 門電路
英文描述： LV/LV-A/LVX/H SERIES, TRIPLE 3-INPUT NAND GATE, PDSO14
封裝： 3.90 MM, PLASTIC, SOT-108-1, MS-012, SO-14
文件頁數(shù)： 4/9頁
文件大?。?/td> 135K
代理商： 935177130112
Philips Semiconductors
Product data
74LV10
Triple 3-input NAND gate
2003 Mar 04
4
ABSOLUTE MAXIMUM RATINGS1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
DC supply voltage
–0.5 to +4.6
V
±IIK
DC input diode current
VI < –0.5 V or VI > VCC + 0.5 V
20
mA
±IOK
DC output diode current
VO < –0.5 V or VO > VCC + 0.5 V
50
mA
±IO
DC output source or sink current
(standard outputs)
–0.5 V < VO < VCC + 0.5 V
25
mA
±IGND,
±ICC
DC VCC or GND current for types with standard
outputs
50
mA
Tstg
Storage temperature range
–65 to +150
°C
PTOT
Power dissipation per package
– plastic mini-pack (SO)
for temperature range: –40
°C to +125 °C
above +70
°C derate linearly with 8 mW/K
500
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
–40
°C to +85 °C
–40
°C to +125 °C UNIT
MIN
TYP1
MAX
MIN
MAX
HIGH l
l I
t
VCC = 1.2 V
0.9
VIH
HIGH level Input
voltage
VCC = 2.0 V
1.4
V
voltage
VCC = 2.7 V to 3.6 V
2.0
LOW l
l I
t
VCC = 1.2 V
0.3
VIL
LOW level Input
voltage
VCC = 2.0 V
0.6
V
voltage
VCC = 2.7 V to 3.6 V
0.8
VCC = 1.2 V; VI = VIH or VIL; –IO = 100 A
1.2
VO
HIGH level output
VCC = 2.0 V; VI = VIH or VIL; –IO = 100 A
1.8
2.0
1.8
V
VOH
voltage; all outputs
VCC = 2.7 V; VI = VIH or VIL; –IO = 100 A
2.5
2.7
2.5
V
VCC = 3.0 V; VI = VIH or VIL; –IO = 100 A
2.8
3.0
2.8
VOH
HIGH level output
voltage; STANDARD
outputs
VCC = 3.0 V; VI = VIH or VIL; –IO = 6 mA
2.40
2.82
2.20
V
VCC = 1.2 V; VI = VIH or VIL; IO = 100 A
0
VO
LOW level output
VCC = 2.0 V; VI = VIH or VIL; IO = 100 A
0
0.2
V
VOL
voltage; all outputs
VCC = 2.7 V; VI = VIH or VIL; IO = 100 A
0
0.2
V
VCC = 3.0 V; VI = VIH or VIL; IO = 100 A
0
0.2
VOL
LOW level output
voltage; STANDARD
outputs
VCC = 3.0 V; VI = VIH or VIL; IO = 6 mA
0.25
0.40
0.50
V
II
Input leakage current
VCC = 3.6 V; VI = VCC or GND
1.0
A
ICC
Quiescent supply
current; SSI
VCC = 3.6 V; VI = VCC or GND; IO = 0
20.0
40
A
ICC
Additional quiescent
supply current per
input
VCC = 2.7 V to 3.6 V; VI = VCC – 0.6 V
500
850
A
NOTE:
1. All typical values are measured at Tamb = 25 °C.
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