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參數(shù)資料
| 型號： | 935209560112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 總線收發(fā)器 |
| 英文描述： | ALVT SERIES, QUAD 4-BIT DRIVER, TRUE OUTPUT, PDSO48 |
| 封裝： | 7.50 MM, PLASTIC, MO-118AA, SOT-370-1, SSOP3-48 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 935209560112 |
Philips Semiconductors
BSH111
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 26 April 2002
7 of 13
9397 750 09629
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aa73
0
0.2
0.4
0.6
0.8
0
0.4
0.8
1.2
1.6
2
VDS (V)
I
D
(A)
VGS = 4.5 V
3 V
2 V
1.8 V
1.6 V
1.4 V
03aa75
0
0.2
0.4
0.6
0.8
0
1
23
45
VGS (V)
ID
(A)
Tj = 25 °C
150
°C
03aa74
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
ID (A)
RDSon
(
)
3 V
2 V
1.8 V
VGS = 4.5 V
1.6 V
1.4 V
!== &
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
a
Tj (°C)
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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