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參數(shù)資料
| 型號： | 935223940557 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-313-2, PLASTIC, LQFP-48 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 124K |
| 代理商： | 935223940557 |
1998 Jan 23
4
Philips Semiconductors
Preliminary specication
GSM 4 W power amplier
CGY2013G
Fig.2 Pin configuration.
handbook, full pagewidth
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CGY2013G
MGD628
GND
VDD2
VGG1
GND
VDD1
GND
RFI
GND
RFO/VDD4
GND
V
DD3
GND
RFO/VDD4
GND
DETO/V
DD5
V
GG2
GND
FUNCTIONAL DESCRIPTION
Operating conditions
The CGY2013G is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the
“ETS 300 577 specification”, which are
defined as follows:
ton = 542.8 s
T = 4.3 ms
Duty cycle = 1/8.
The device is specifically designed for pulse operation
allowing the use of a LQFP48 plastic package.
Power amplier
The power amplifier consists of four cascaded gain stages
with an open-drain configuration. Each drain has to be
loaded externally by an adequate reactive circuit which
also has to be a DC path to the supply.
The amplifier bias is set using a negative voltage applied
at pins VGG1 and VGG2. This negative voltage must be
present before the supply voltage is applied to the drains
to avoid current overstress for the amplifier.
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