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參數(shù)資料
| 型號(hào)： | 935223940557 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-313-2, PLASTIC, LQFP-48 |
| 文件頁(yè)數(shù)： | 5/15頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | 935223940557 |
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CGY2013G
Information as of 2000-08-29
CGY2013G; GSM 4 W power amplifier
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Description
The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically
designed to operate at 3.6 V battery supply.
The PA requires only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. It can be
switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages.
Features
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Power Amplifier (PA) overall efficiency 52%
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35.5 dB gain
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0 dBm input power
l
Gain control range >55 dB
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Low output noise floor of PA < -130 dBm/Hz in GSM RX band
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Wide operating temperature range -20 to +85 °C
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LQFP 48 pin package
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Compatible with power ramping controller PCF5077
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Compatible with GSM RF transceiver SA1620.
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