參數(shù)資料
型號: 93C56AMS
廠商: Microchip Technology Inc.
英文描述: IGBT Module; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:60.6W; Collector Current:30A; Collector Emitter Voltage, Vceo:600V; Package/Case:DIP-41
中文描述: 2K微絲兼容串行EEPROM
文件頁數(shù): 7/24頁
文件大?。?/td> 405K
代理商: 93C56AMS
2003 Microchip Technology Inc.
DS21794B-page 7
93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C
2.5
ERASE ALL (ERAL)
The Erase All (
ERAL
) instruction will erase the entire
memory array to the logical ‘1’ state. The ERAL cycle is
identical to the ERASE cycle, except for the different
opcode. The ERAL cycle is completely self-timed and
commences at the falling edge of the CS, except on
‘93C’ devices where the rising edge of CLK before the
last data bit initiates the write cycle. Clocking of the
CLK pin is not necessary after the device has entered
the ERAL cycle.
The DO pin indicates the READY/BUSY status of the
device, if CS is brought high after a minimum of 250 ns
low (T
CSL
).
Note:
Issuing a START bit and then taking CS low
will clear the READY/BUSY status from
DO.
V
CC
must be
4.5V for proper operation of ERAL.
FIGURE 2-3:
ERAL TIMING FOR 93AA AND 93LC DEVICES
FIGURE 2-4:
ERAL TIMING FOR 93C DEVICES
CS
CLK
DI
DO
T
CSL
CHECK STATUS
1
0
0
1
0
X
X
T
SV
T
CZ
BUSY
READY
HIGH-Z
T
EC
HIGH-Z
V
CC
must be
4.5V for proper operation of ERAL.
CS
CLK
DI
DO
T
CSL
CHECK STATUS
1
0
0
1
0
X
X
T
SV
T
CZ
BUSY
READY
HIGH-Z
T
EC
HIGH-Z
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