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參數(shù)資料
| 型號： | A28F400BR-B |
| 廠商： | Intel Corp. |
| 英文描述： | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導塊閃速存儲器) |
| 中文描述： | 4兆位（為512k × 8）開機區(qū)塊快閃記憶體（4兆位（為512k × 8）引導塊閃速存儲器） |
| 文件頁數(shù)： | 30/36頁 |
| 文件大?。?/td> | 453K |
| 代理商： | A28F400BR-B |
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A28F400BR-T/B
E
30
ADVANCE INFORMATION
Table 13. AC Characteristics: WE#
–Controlled Write Operations
(1)
(Automotive Temperature)
Symbol
Parameter
Notes
Min
Max
Unit
t
AVAV
Write Cycle Time
80
ns
t
PHWL
RP# High Recovery to WE# Going Low
450
ns
t
ELWL
CE# Setup to WE# Going Low
0
ns
t
PHHWH
Boot Block Lock Setup to WE# Going High
6,8
100
ns
t
VPWH
V
PP
Setup to WE# Going High
5,8
100
ns
t
AVWH
Address Setup to WE# Going High
3
60
ns
t
DVWH
Data Setup to WE# Going High
4
60
ns
t
WLWH
WE# Pulse Width
60
ns
t
WHDX
Data Hold Time from WE# High
4
0
ns
t
WHAX
Address Hold Time from WE# High
3
0
ns
t
WHEH
CE# Hold Time from WE# High
10
ns
t
WHWL
WE# Pulse Width High
20
ns
t
WHQV1
Duration of Word/Byte Program Operation
2,5
7
μs
t
WHQV2
Duration of Erase Operation (Boot)
2,5,6
0.4
s
t
WHQV3
Duration of Erase Operation (Parameter)
2,5
0.4
s
t
WHQV4
Duration of Erase Operation (Main)
2,5
0.7
s
t
QWL
V
PP
Hold from Valid SRD
5,8
0
ns
t
QVPH
RP# V
HH
Hold from Valid SRD
6,8
0
ns
t
PHBR
Boot-Block Relock Delay
7,8
100
ns
NOTES:
1.
Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to
AC Characteristics during read mode.
The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled
internally which includes verify and margining operations.
Refer to command definition table for valid A
IN
.
Refer to command definition table for valid D
IN
.
Program/erase durations are measured to valid SRD data (successful operation, SR.7 =1)
For boot block program/erase, RP# should be held at V
HH
or WP# should be held at V
IH
until operation completes
successfully.
Time t
PHBR
is required for successful relocking of the boot block.
Sampled, but not 100% tested.
V
PP
at 5.0V.
10. V
PP
at 12.0V.
11. See 5V Standard Test Configuration.
2.
3.
4.
5.
6.
7.
8.
9.
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相關代理商/技術參數(shù) |
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|---|---|
| A28F400BR-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BR-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F400BR-T/B |
| A28F400BR-TB | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
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