Revision 13 2-21 3.3 V GTL+ 35 mA 12 – 2.5 V GTL+ 33 mA 15 – HSTL (I) 8 mA 50 HSTL (II) 15 mA
參數(shù)資料
型號: A3PE600-1PQ208
廠商: Microsemi SoC
文件頁數(shù): 92/162頁
文件大小: 0K
描述: IC FPGA 600000 GATES 208-PQFP
標準包裝: 24
系列: ProASIC3E
RAM 位總計: 110592
輸入/輸出數(shù): 147
門數(shù): 600000
電源電壓: 1.425 V ~ 1.575 V
安裝類型: 表面貼裝
工作溫度: 0°C ~ 70°C
封裝/外殼: 208-BFQFP
供應(yīng)商設(shè)備封裝: 208-PQFP(28x28)
ProASIC3E Flash Family FPGAs
Revision 13
2-21
3.3 V GTL+
35 mA
12
2.5 V GTL+
33 mA
15
HSTL (I)
8 mA
50
HSTL (II)
15 mA 4
25
SSTL2 (I)
15 mA
27
31
SSTL2 (II)
18 mA
13
15
SSTL3 (I)
14 mA
44
69
SSTL3 (II)
21 mA
18
32
Table 2-20 I/O Weak Pull-Up/Pull-Down Resistances
Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values
VCCI
R((WEAK PULL-UP)1
(
)
R(WEAK PULL-DOWN)2
(
)
Min.
Max.
Min.
Max.
3.3 V
10 k
45 k
10 k
45 k
3.3 V (Wide
Range I/Os)
10 k
45 k
10 k
45 k
2.5 V
11 k
55 k
12 k
74 k
1.8 V
18 k
70 k
17 k
110 k
1.5 V
19 k
90 k
19 k
140 k
Notes:
1. R(WEAK PULL-UP-MAX) = (VCCImax – VOHspec) / I(WEAK PULL-UP-MIN)
2. R(WEAK PULL-DOWN-MAX) = (VOLspec) / I(WEAK PULL-DOWN-MIN)
Table 2-19 I/O Output Buffer Maximum Resistances1 (continued)
Standard
Drive Strength
RPULL-DOWN ()2
RPULL-UP ()3
Notes:
1. These maximum values are provided for informational reasons only. Minimum output buffer resistance
values depend on VCCI, drive strength selection, temperature, and process. For board design
considerations and detailed output buffer resistances, use the corresponding IBIS models located on the
Microsemi SoC Products Group website at www.microsemi.com/soc/techdocs/models/ibis.html.
2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec
3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec
4. Output drive strength is below JEDEC specification.
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