參數(shù)資料
型號: AB28F400BR
廠商: Intel Corp.
英文描述: 5 V Automotive Boot Block Flash Memory(5V自引導(dǎo)塊閃速存儲器)
中文描述: 5伏汽車啟動塊閃存(5V的自引導(dǎo)塊閃速存儲器)
文件頁數(shù): 33/40頁
文件大?。?/td> 257K
代理商: AB28F400BR
E
5.5
AB28F200BR, AB28F400BR
33
ADVANCE INFORMATION
AC Characteristics
—Read Operations
Speed
–80
#
Sym
Parameter
V
CC
5 V
±
10%
(5)
Unit
Load
100 pF
Notes
Min
Max
R1
t
AVAV
Read Cycle Time
80
ns
R2
t
AVQV
Address to Output Delay
80
ns
R3
t
ELQV
CE# to Output Delay
2
80
ns
R4
t
GLQV
OE# to Output Delay
2
40
ns
R5
t
PHQV
RP# to Output Delay
550
ns
R6
t
ELQX
CE# to Output in Low Z
3
0
ns
R7
t
GLQX
OE# to Output in Low Z
3
0
ns
R8
t
EHQZ
CE# to Output in High Z
3
25
ns
R9
t
GHQZ
OE# to Output in High Z
3
25
ns
R10
t
OH
Output Hold from Address, CE#, or
OE# Change, Whichever Occurs
First
3
0
ns
NOTES:
1. See AC Input/Output Reference Waveform for timing measurements.
2. OE# may be delayed up to t
CE
–t
OE
after the falling edge of CE# without impact on t
CE
.
3. Sampled, but not 100% tested.
4. See
Test Configuration
(Figure 11), 5 V High-Speed Test component values.
5. See
Test Configuration
(Figure 11), 5 V Standard Test component values.
6. Dynamic BYTE# switching between word and byte modes is not supported. Mode changes must be made when the device
is in deep power-down or powered down.
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