參數(shù)資料
型號(hào)： ACT-F128K8N-150F7T
元件分類： EEPROM
英文描述： EEPROM
中文描述： EEPROM的
文件頁數(shù)： 3/21頁
文件大?。?/td> 153K
代理商： ACT-F128K8N-150F7T
Aeroflex Circuit Technology
SCD1676 REV A 5/6/98 Plainview NY (516) 694-6700
3
z
Absolute Maximum Ratings
Parameter
Symbol
T
C
Range
-55 to +125
Units
°C
Case Operating Temperature
Storage Temperature Range
T
STG
-65 to +150
°C
Supply Voltage Range
V
CC
-2.0 to +7.0
V
Signal Voltage Range (Any Pin Except A9) Note 1
V
G
-2.0 to +7.0
V
Maximum Lead Temperature (10 seconds)
300
°C
Data Retention
10
Years
Endurance (Write/Erase cycles)
100,000 Minimum
A9 Voltage for sector protect, Note 2
V
ID
-2.0 to +14.0
V
Note 1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may undershoot V
SS
to -2.0v for periods of
up to 20ns. Maximum DC voltage on input and I/O pins is V
CC
+ 0.5V. During voltage transitions, inputs and I/O pins may
overshoot to V
CC
+ 2.0V for periods up to 20 ns.
Note 2. Minimum DC input voltage on A9 is -0.5V. During voltage transitions, A9 may undershoot V
SS
to -2.0V for periods of up to 20ns.
Maximum DC input voltage on A9 is +12.5V which may overshoot to 14.0V for periods up to 20ns.
Normal Operating Conditions
Symbol
V
CC
Parameter
Minimum
+4.5
Maximum
+5.5
Units
V
Power Supply Voltage
V
IH
Input High Voltage
+2.0
V
CC
+ 0.5
+0.8
V
V
IL
Input Low Voltage
-0.5
V
Tc
Operating Temperature (Military)
-55
+125
°C
V
ID
A9 Voltage for sector protect
11.5
12.5
V
Capacitance
(V
IN
= 0V, f = 1MHz, Tc = 25°C)
Symbol
C
AD
Parameter
Maximum
15
Units
pF
A
0
– A
16
Capacitance
C
OE
C
WE
OE Capacitance
15
pF
Write Enable Capacitance
15
pF
C
CE
Chip Enable Capacitance
15
pF
C
I
/
O
I/O0 – I/O7 Capacitance
15
pF
Parameters Guaranteed but not tested
DC Characteristics – CMOS Compatible
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C, unless otherwise indicated)
Parameter
Sym
Conditions
Speeds 60, 70, 90, 120 & 150ns
Minimum
Maximum
Units
μA
Input Leakage Current
I
LI
V
CC
= 5.5V, V
IN
= GND to V
CC
10
Output Leakage Current
I
LO
V
CC
= 5.5V, V
IN
= GND to V
CC
CE = V
IL
,
OE = V
IH
, f = 5MHz
CE = V
IL
,
OE = V
IH
10
μA
Active Operating Supply Current for Read (1)
I
CC
1
35
mA
Active Operating Supply Current for Program or Erase (2)
I
CC
2
50
mA
Operating Standby Supply Current
I
CC
3
V
CC
= 5.5V, CE = V
IH
, f = 5MHz
1.6
mA
Output Low Voltage
V
OL
I
OL
= +8.0 mA, V
CC
= 4.5V
0.45
V
Output High Voltage
V
OH
I
OH
= –2.5 mA, V
CC
= 4.5V
0.85 x V
CC
V
Low Power Supply Lock-Out Voltage (4)
V
LKO
3.2
V
Note 1. The Icc current listed includes both the DC operating current and the frequency dependent component (At 6 MHz). The frequency
component typically is less than 2 mA/MHz, with OE at V
IN
.
Note 2. Icc active while Embedded Algorithm (Program or Erase) is in progress.
Note 3. DC Test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V, unless otherwise indicated.
Note 4. Parameter Guaranteed by design, but not tested.
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參數(shù)描述
ACT-F128K8N-150P4C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM
ACT-F128K8N-150P4I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM
ACT-F128K8N-150P4M 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM
ACT-F128K8N-150P4Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM
ACT-F128K8N-150P4T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM
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