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參數(shù)資料
| 型號： | ACT-F128K8N-150F7T |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 4/21頁 |
| 文件大?。?/td> | 153K |
| 代理商： | ACT-F128K8N-150F7T |
Aeroflex Circuit Technology
SCD1676 REV A 5/6/98 Plainview NY (516) 694-6700
4
AC Characteristics – Read Only Operations
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Parameter
Symbol
JEDEC Stand’d
t
AVAV
–60
Min Max
60
–70
Min Max
70
–90
Min Max
90
–120
Min Max
120
–150
Min Max
150
Units
Read Cycle Time
t
RC
ns
Address Access Time
t
AVQV
t
ACC
60
70
90
120
150
ns
Chip Enable Access Time
t
ELQV
t
CE
60
70
90
120
150
ns
Output Enable to Output Valid
t
GLQV
t
OE
30
35
40
50
55
ns
Chip Enable to Output High Z (1)
t
EHQZ
t
DF
20
20
25
30
35
ns
Output Enable High to Output High Z(1)
t
GHQZ
t
DF
20
20
25
30
35
ns
Output Hold from Address, CE or OE Change, Whichever is First
t
AXQX
t
OH
0
0
0
0
0
ns
Note 1. Guaranteed by design, but not tested
AC Characteristics – Write/Erase/Program Operations, WE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Parameter
Symbol
JEDEC Stand’d
t
AVAC
–60
Min Max
60
–70
Min Max
70
–90
Min Max
90
–120
Min Max
120
–150
Min Max
150
Units
Write Cycle Time
t
WC
ns
Chip Enable Setup Time
t
ELWL
t
CE
0
0
0
0
0
ns
Write Enable Pulse Width
t
WLWH
t
WP
30
35
45
50
50
ns
Address Setup Time
t
AVWL
t
AS
0
0
0
0
0
ns
Data Setup Time
t
DVWH
t
DS
30
30
45
50
50
ns
Data Hold Time
t
WHDX
t
DH
0
0
0
0
0
ns
Address Hold Time
t
WLAX
t
AH
45
45
45
50
50
ns
Write Enable Pulse Width High
t
WHWL
t
WPH
20
20
20
20
20
ns
Duration of Byte Programming Operation
Typ = 16 μs
t
WHWH
1
14
TYP
14
TYP
14
TYP
14
TYP
14
TYP
μs
Sector Erase Time
t
WHWH
2
60
60
60
60
60
Sec
Read Recovery Time before Write
t
GHWL
0
0
0
0
0
μs
Vcc Setup Time
t
VCE
50
50
50
50
50
μs
Chip Programming Time
12.5
12.5
12.5
12.5
12.5
Sec
Chip Erase Time
t
WHWH
3
120
120
120
120
120
Sec
AC Characteristics – Write/Erase/Program Operations, CE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Parameter
Symbol
JEDEC Stand’d
t
AVAC
–60
Min Max
60
–70
Min Max
70
–90
Min Max
90
–120
Min Max
120
–150
Min Max
150
Units
Write Cycle Time
t
WC
ns
Write Enable Setup Time
t
WLE
L
t
WS
0
0
0
0
0
ns
Chip Enable Pulse Width
t
ELEH
t
CP
30
35
45
50
50
ns
Address Setup Time
t
AVEL
t
AS
0
0
0
0
0
ns
Data Setup Time
t
DVEH
t
DS
30
30
45
50
50
ns
Data Hold Time
t
EHDX
t
DH
0
0
0
0
0
ns
Address Hold Time
t
ELAX
t
AH
45
45
45
50
50
ns
Chip Select Pulse Width High
t
EHEL
t
CPH
20
20
20
20
20
ns
Duration of Byte Programming
t
WHWH
1
14
TYP
14
TYP
14
TYP
14
TYP
14
TYP
μs
Sector Erase Time
t
WHWH
2
t
GHEL
60
60
60
60
60
Sec
Read Recovery Time
0
0
0
0
0
ns
Chip Programming Time
12.5
12.5
12.5
12.5
12.5
Sec
Chip Erase Time
t
WHWH
3
120
120
120
120
120
Sec
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ACT-F128K8N-150P4C | EEPROM |
| ACT-F128K8N-150P4I | EEPROM |
| ACT-F128K8N-150P4M | EEPROM |
| ACT-F128K8N-150P4Q | EEPROM |
| ACT-F128K8N-150P4T | EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ACT-F128K8N-150P4C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| ACT-F128K8N-150P4I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| ACT-F128K8N-150P4M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| ACT-F128K8N-150P4Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| ACT-F128K8N-150P4T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
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