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參數(shù)資料
| 型號： | ACT-F512K8-120F3M |
| 英文描述： | x8 Flash EEPROM |
| 中文描述： | x8閃存EEPROM的 |
| 文件頁數(shù)： | 11/21頁 |
| 文件大?。?/td> | 153K |
| 代理商： | ACT-F512K8-120F3M |
Aeroflex Circuit Technology
SCD1676 REV A 5/6/98 Plainview NY (516) 694-6700
11
Bus
Operations
Command
Sequence
Comments
Standby
Write
Erase
Read
Data Polling to Verify Erasure
Standby
Compare Output to FFH
Figure 4
Erase Algorithm
Start
Erasure Completed
Write Erase Command Sequence
(See Below)
Data Poll or Toggle Bit
Successfully Completed
Chip Erase Command Sequence
(Address/Command)
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command)
5555H/AAH
2AAAH/55H
5555H/80H
5555H/AAH
2AAAH/55H
5555H/10H
5555H/80H
5555H/AAH
2AAAH/55H
5555H/AAH
2AAAH/55H
Sector Address/30H
Sector Address/30H
Sector Address/30H
Additional Sector
Erase Commands
are Optional
Note 1. To Ensure the command has been accepted, the system software should check the
status of D3 prior to and following each subsequent sector erase command. If D3 were high on
the second status check, the command may not have been accepted.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ACT-F512K8-120P4M | x8 Flash EEPROM |
| ACT-F512K8-150F3M | x8 Flash EEPROM |
| ACT-S512K32N-035F1Q | x32 SRAM Module |
| ACT-S512K32N-035F2Q | x32 SRAM Module |
| ACT-S512K32N-035P1Q | x32 SRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ACT-F512K8-120P4M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| ACT-F512K8-150F3M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| ACT-F512K8N-060F6C | 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F512K8 High Speed 4 Megabit Monolithic FLASH |
| ACT-F512K8N-060F6I | 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F512K8 High Speed 4 Megabit Monolithic FLASH |
| ACT-F512K8N-060F6M | 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F512K8 High Speed 4 Megabit Monolithic FLASH |
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