參數(shù)資料
型號: ACT-F512K8-120F3M
英文描述: x8 Flash EEPROM
中文描述: x8閃存EEPROM的
文件頁數(shù): 17/21頁
文件大?。?/td> 153K
代理商: ACT-F512K8-120F3M
Aeroflex Circuit Technology
SCD1676 REV A 5/6/98 Plainview NY (516) 694-6700
17
Write/Erase/Program Operation, CE Controlled
Figure 13
CE
OE
WE
Data
Addresses
5.0V
5555H
PA
Data Polling
PA
D7
D
OUT
PD
AOH
t
WHWH
1
t
AH
t
AS
t
DH
t
CPH
t
CP
t
DS
t
WS
t
WC
t
GHEL
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
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