AD648–SPECIFICATIONS (@ + 25 C and V S = 15 V dc, unless" />
參數(shù)資料
型號(hào): AD648KRZ-REEL7
廠商: Analog Devices Inc
文件頁數(shù): 5/12頁
文件大小: 0K
描述: IC OPAMP BIFET 1MHZ DUAL 8SOIC
標(biāo)準(zhǔn)包裝: 1,000
放大器類型: J-FET
電路數(shù): 2
轉(zhuǎn)換速率: 1.8 V/µs
增益帶寬積: 1MHz
電流 - 輸入偏壓: 3pA
電壓 - 輸入偏移: 300µV
電流 - 電源: 340µA
電流 - 輸出 / 通道: 15mA
電壓 - 電源,單路/雙路(±): ±4.5 V ~ 18 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 帶卷 (TR)
AD648–SPECIFICATIONS (@ + 25 C and V
S =
15 V dc, unless otherwise noted.)
–2–
REV. E
AD648J/A/S
AD648K/B/T
Model
Min
Typ
Max
Min
Typ
Max
Unit
INPUT OFFSET VOLTAGE
1
Initial Offset
0.75
2.0
0.3
1.0
TMIN to TMAX
3.0/3.0/3.0
1.5/1.5/2.0
mV
vs. Temperature
20
10
V/°C
vs. Supply
80
86
dB
vs. Supply, TMIN to TMAX
76/76/76
80
dB
Long-Term Offset Stability
15
V/month
INPUT BIAS CURREN
Either Input,
2 V
CM = 0
5
20
3
10
pA
Either Input
2 at T
MAX, VCM = 0
0.45/1.3/20
0.25/0.65/10
nA
Max Input Bias Current Over
Common-Mode Voltage Range
30
15
pA
Offset Current, VCM = 0
5
10
2
5
pA
Offset Current at TMAX
0.25/0.7/10
0.15/0.35/5
nA
MATCHING CHARACTERISTICS
3
Input Offset Voltage
1.0
2.0
0.5
1.0
mV
Input Offset Voltage TMIN to TMAX
3.0/3.0/3.0
1.5/1.5/2.0
mV
Input Offset Voltage vs. Temperature
8
5
V/°C
Input Bias Current
10
5
pA
Crosstalk
–120
dB
INPUT IMPEDANCE
Differential
1
× 101 2 3
1
× 1012 3
pF
Common Mode
3
× 1012 3
3
× 1012 3
pF
INPUT VOLTAGE RANGE
Differential
4
±20
V
Common Mode
±11
±12
±11
±12
V
Common-Mode Rejection
VCM =
±10 V
76
82
dB
TMIN to TMAX
76/76/76
82
dB
VCM =
±11 V
70
76
dB
TMIN to TMAX
70/70/70
76
dB
INPUT VOLTAGE NOISE
Voltage 0.1 Hz to 10 Hz
2
V p-p
f = 10 Hz
80
nV/
√Hz
f = 100 Hz
40
nV/
√Hz
f = 1 kHz
30
nV/
√Hz
f = 10 kHz
30
nV/
√Hz
INPUT CURRENT NOISE
f = 1 kHz
1.8
fA/
√Hz
FREQUENCY RESPONSE
Unity Gain, Small Signal
0.8
1.0
0.8
1.0
MHz
Full Power Response
30
kHz
Slew Rate, Unity Gain
1.0
1.8
1.0
1.8
V/
s
Settling Time to
±0.01%
8
s
OPEN-LOOP GAIN
VO =
±10 V, R
L
≥ 10 k
300
1000
300
1000
V/mV
TMIN to TMAX, RL
≥ 10 k
300/300/300
700
300
700
V/mV
VO =
±10 V, R
L
≥ 5 k
150
500
150
500
V/mV
TMIN to TMAX, RL
≥ 5 k
150/150/150
300
150
300
V/mV
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