參數資料
| 型號： | AD669BRZ-REEL |
| 廠商： | Analog Devices Inc |
| 文件頁數： | 10/12頁 |
| 文件大小： | 0K |
| 描述： | IC DAC 16BIT MONO VREF 28-SOIC |
| 產品變化通告： | AD669 Improvement Change 11/Jul/2012 |
| 標準包裝： | 1 |
| 系列： | DACPORT® |
| 設置時間： | 10µs |
| 位數： | 16 |
| 數據接口： | 并聯 |
| 轉換器數目： | 1 |
| 電壓電源： | 雙 ± |
| 功率耗散（最大）： | 625mW |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 28-SOIC（0.295"，7.50mm 寬） |
| 供應商設備封裝： | 28-SOIC W |
| 包裝： | 標準包裝 |
| 輸出數目和類型： | * |
| 采樣率（每秒）： | 167k |
| 其它名稱： | AD669BRZ-REELDKR |
AD669
REV. A
–7–
allows 5 V, 8.192 V and 10.24 V ranges to be used. For ex-
ample, by using the AD586 5 V reference, outputs of 0 V to
+5 V unipolar or
±5 V bipolar can be realized. Using the
AD586 voltage reference makes it possible to operate the
AD669 off of
±12 V supplies with 10% tolerances.
Figure 5 shows the AD669 using the AD586 5 V reference in
the bipolar configuration. This circuit includes two optional po-
tentiometers and one optional resistor that can be used to adjust
the gain, offset and bipolar zero errors in a manner similar to
that described in the BIPOLAR CONFIGURATION section.
Use –5.000000 V and +4.999847 as the output values.
50
OUTPUT
GND
LDAC
DB15
(MSB)
(LSB)
DB0
CS
L1
–V
EE
+V
CC
+V LL
AD669
22
7
6
5
23
27
2
14
3
26
25
R1
100
R2
10k
4
6
5
AD586
+V
CC
28
REF IN
REF OUT
VOUT
TRIM
GND
SPAN/BIP
OFFSET
24
2
Figure 5. Using the AD669 with the AD586 5 V Reference
USING THE AD669 WITH THE AD688 HIGH PRECISION
VOLTAGE REFERENCE
The AD669 is specified for gain drift from 15 ppm/
°C to
25 ppm/
°C (depending upon grade) using its internal 10 volt
reference. Since the internal reference contributes the vast ma-
jority of this drift, an external high precision voltage reference
will greatly improve performance over temperature. As shown in
Figure 6, the +10 volt output from the AD688 is used as the
AD669 reference. With a 3 ppm/
°C drift over the industrial
temperature range, the AD688 will improve the gain drift by a
factor of 5 to a factor of 8 (depending upon the grade of the
AD669 being used). Using this combination may result in ap-
parent increases in initial gain error due to the differences
between the internal reference by which the device is laser
trimmed and the external reference with which the device is ac-
tually applied. The AD669 internal reference is specified to be
10 volts
±20 mV whereas the AD688 is specified as 10 volts
±5 mV. This may result in an additional 5 mV (33 LSBs) of ap-
parent initial gain error beyond the specified AD669 gain error.
The circuit shown in Figure 6 also makes use of the –10 V
AD688 output to allow the unipolar offset and gain to be ad-
justed to zero in the manner described in the UNIPOLAR
CONFIGURATION section.
R2
100
R3
20k
R1
100
LDAC
DB15
(MSB)
(LSB)
DB0
CS
L1
-VEE
+VCC
+VLL
16-BIT LATCH
10k
AMP
AD669
22
7
6
5
23
27
28
10V REF
2
1
4
3
26
24
10k
10.05k
16-BIT LATCH
16-BIT DAC
25
R4
10k
7
6
3
1
14
15
2
16
5
10
8
12
11
13
R1
R2
R5
R6
R3
AD688
A3
A1
A4
A2
R4
RS
9
4
GND
OUTPUT
0 TO +10V
+V
CC
–V
EE
Figure 6. Using the AD669 with the AD688 High Precision
±10 V Reference
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