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–
3
–
AD7304/AD7305
REV. A
TIMING SPECIFICATIONS
(@ V
DD
= +3 V or +5 V, V
SS
= 0 V; or V
DD
= +5 V and V
SS
= –5 V, V
SS
≤
V
REF
≤
V
DD
, –40 C < T
A
<
+85 C/125 C, unless otherwise noted.)
Parameter
Symbol
3 V
10%
5 V 10%
5 V 10%
Units
INTERFACE TIMING SPECIFICATIONS
1, 2
AD7304 Only
Clock Width High
Clock Width Low
Data Setup
Data Hold
Load Pulsewidth
Load Setup
Load Hold
Clear Pulsewidth
Select
Deselect
AD7305 Only
Data Setup
Data Hold
Address Setup
Address Hold
Write Width
Load Pulsewidth
Load Setup
Load Hold
t
CH
t
CL
t
DS
t
DH
t
LDW
t
LD1
t
LD2
t
CLWR
t
CSS
t
CSH
70
70
50
30
70
40
40
60
30
60
55
55
40
20
60
30
30
60
20
40
55
55
40
20
60
30
30
60
20
40
ns min
ns min
ns min
ns min
ns min
ns min
ns min
ns min
ns min
ns min
t
DS
t
DH
t
AS
t
AH
t
WR
t
LDW
t
LS
t
LH
60
30
60
30
60
60
60
30
40
20
40
20
50
50
40
20
40
20
40
20
50
50
40
20
ns min
ns min
ns min
ns min
ns min
ns min
ns min
ns min
NOTES
1
These parameters are guaranteed by design and not subject to production testing.
2
All input control signals are specified with t
R
= t
F
= 2 ns (10% to 90% of V
DD
) and timed from a voltage level of 1.6 V.
ABSOLUTE MAXIMUM RATINGS*
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V, +8 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V, –8 V
V
REFX
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
SS
, V
DD
Logic Inputs to GND . . . . . . . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
V
OUTX
to GND . . . . . . . . . . . . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
I
OUT
Short Circuit to GND . . . . . . . . . . . . . . . . . . . . . 50 mA
Package Power Dissipation . . . . . . . . . . . . . . (T
J
MAX
–T
A
)/
θ
JA
Thermal Resistance
θ
JA
16-Lead Plastic DIP Package (N-16) . . . . . . . . . . 103
°
C/W
16-Lead SOIC Package (R-16) . . . . . . . . . . . . . . . 73
°
C/W
TSSOP-16 Package (RU-16) . . . . . . . . . . . . . . . . 180
°
C/W
20-Lead Plastic DIP Package (N-20) . . . . . . . . . . 120
°
C/W
20-Lead SOIC Package (R-20) . . . . . . . . . . . . . . . 74
°
C/W
TSSOP-20 Package (RU-20) . . . . . . . . . . . . . . . . 155
°
C/W
Maximum Junction Temperature (T
J
MAX
) . . . . . . . . .+150
°
C
Operating Temperature Range . . . . . . . . . . . –40
°
C to +85
°
C
Storage Temperature Range . . . . . . . . . . . . –65
°
C to +150
°
C
Lead Temperature
N-16 and N-20 (Soldering, 10 secs) . . . . . . . . . . . .+300
°
C
R-16, R-20, RU-16, RU-20 (Vapor Phase, 60 secs) . .+215
°
C
R-16, R-20, RU-16, RU-20 (Infrared, 15 secs) . . . .+220
°
C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
ORDERING GUIDE
Temperature
Range
Package
Description
Package
Options
Model
AD7304BN
AD7304BR
AD7304YR
AD7304BRU
AD7305BN
AD7305BR
AD7305YR
AD7305BRU
–40
°
C/+85
°
C
–40
°
C/+85
°
C
–40
°
C/+125
°
C
–40
°
C/+85
°
C
–40
°
C/+85
°
C
–40
°
C/+85
°
C
–40
°
C/+125
°
C
–40
°
C/+85
°
C
16-Lead P-DIP
16-Lead SOIC
16-Lead SOIC
TSSOP-16
20-Lead P-DIP
20-Lead SOIC
20-Lead SOIC
TSSOP-20
N-16
R-16
R-16
RU-16
N-20
R-20
R-20
RU-20
The AD7304/AD7305 contains 2759 transistors. Die size: 103 mil
×
102 mil,
10,506 sq mil.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7304/AD7305 features proprietary ESD protection circuitry, permanent dam-
age may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE