AD7845
REV. B
–3–
Limit at TMIN to TMAX
Parameter
(All Versions)
Units
Test Conditions/Comments
tCS
30
ns min
Chip Select to Write Setup Time
tCH
0
ns min
Chip Select to Write Hold Time
tWR
30
ns min
Write Pulsewidth
tDS
80
ns min
Data Setup Time
tDH
0
ns min
Data Hold Time
NOTES
1Guaranteed by design and characterization, not production tested.
Specifications subject to change without notice.
TIMING CHARACTERISTICS1 (V
DD = +15 V,
5%. VSS = –15 V,
5%. VREF = +10 V. AGND = DGND = O V.)
ORDERING GUIDE
1
Relative
Temperature
Accuracy
Package
Model
2
Range
@ +25 C
Option
3
AD7845JN
0
°C to +70°C
±1 LSB
N-24
AD7845KN
0
°C to +70°C
±1/2 LSB
N-24
AD7845JP
0
°C to +70°C
±1 LSB
P-28A
AD7845KP
0
°C to +70°C
±1/2 LSB
P-28A
AD7845JR
0
°C to +70°C
±1 LSB
R-24
AD7845KR
0
°C to +70°C
±1/2 LSB
R-24
AD7845AQ
–40
°C to +85°C
±1 LSB
Q-24
AD7845BQ
–40
°C to +85°C
±1/2 LSB
Q-24
AD7845AR
–40
°C to +85°C
±1 LSB
R-24
AD7845BR
–40
°C to +85°C
±1/2 LSB
R-24
AD7845SQ/883B
–55
°C to +125°C
±1 LSB
Q-24
AD7845TQ/883B
–55
°C to +125°C
±1/2 LSB
Q-24
AD7845SE/883B
–55
°C to +125°C
±1 LSB
E-28A
NOTES
1Analog Devices reserves the right to ship either ceramic (D-24A) or cerdip
(Q-24) hermetic packages.
2To order MIL-STD-883, Class B processed parts, add /883B to part number.
3E = Leadless Ceramic Chip Carrier; N = Plastic DIP; P = Plastic Leaded Chip
Carrier; Q = Cerdip; R = SOIC.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7845 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
Operating Temperature Range
Commercial (J, K Versions) . . . . . . . . . . . . . 0
°C to +70°C
Industrial (A, B Versions) . . . . . . . . . . . . –40
°C to +85°C
Extended (S, T Versions) . . . . . . . . . . . . –55
°C to +125°C
Storage Temperature Range . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . +300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect device
reliability. Only one Absolute Maximum Rating may be applied at any one time.
2V
OUT may be shorted to AGND provided that the power dissipation of the
package is not exceeded.
CS
WR
DATA
5V
0V
5V
0V
5V
0V
NOTES
1. ALL INPUT SIGNAL RISE AND FALL TIMES MEASURED FROM
10% TO 90% OF +5V. tR = tF = 20ns.
2. TIMING MEASUREMENT REFERENCE LEVEL IS
VIH + VIL
2
tCS
tCH
tWR
tDS
tDH
Figure 1. AD7845 Timing Diagram
ABSOLUTE MAXIMUM RATINGS
1
(TA = +25°C unless otherwise stated)
VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +17 V
VSS to DGND . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –17 V
VREF to AGND . . . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
VRFB to AGND . . . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
VRA to AGND . . . . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
VRB to AGND . . . . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
VRC to AGND . . . . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
VOUT to AGND
2
. . . . . . . . . . . . . . . VDD + 0.3 V, VSS – 0.3 V
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, VDD
Digital Input Voltage to DGND . . . . . –0.3 V to VDD + 0.3 V
Power Dissipation (Any Package)
To +75
°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW
Derates above +75
°C . . . . . . . . . . . . . . . . . . . . . 10 mW/°C
WARNING!
ESD SENSITIVE DEVICE