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參數(shù)資料
| 型號(hào)： | AD7847AR |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大小： | 0K |
| 描述： | IC DAC 12BIT MULT DUAL 24-SOIC |
| 產(chǎn)品培訓(xùn)模塊： | Data Converter Fundamentals DAC Architectures |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 設(shè)置時(shí)間： | 4µs |
| 位數(shù)： | 12 |
| 數(shù)據(jù)接口： | 并聯(lián) |
| 轉(zhuǎn)換器數(shù)目： | 2 |
| 電壓電源： | 雙 ± |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 24-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 24-SOIC W |
| 包裝： | 管件 |
| 輸出數(shù)目和類型： | 2 電壓，單極；2 電壓，雙極 |
| 采樣率（每秒）： | 250k |
AD7837/AD7847
REV. C
–3–
TIMING CHARACTERISTICS1, 2, 3
Limit at TMIN, TMAX
Parameter
(All Versions)
Unit
Conditions/Comments
t1
0
ns min
CS to WR Setup Time
t2
0
ns min
CS to WR Hold Time
t3
30
ns min
WR Pulsewidth
t4
80
ns min
Data Valid to
WR Setup Time
t5
0
ns min
Data Valid to
WR Hold Time
t6
4
0
ns min
Address to
WR Setup Time
t7
4
0
ns min
Address to
WR Hold Time
t8
4
50
ns min
LDAC Pulsewidth
NOTES
1All input signals are specified with tr = tf = 5 ns (10% to 90% of 5 V) and timed from a voltage level of 1.6 V.
2See Figures 3 and 5.
3Guaranteed by design and characterization, not production tested.
4AD7837 only.
ABSOLUTE MAXIMUM RATINGS
*
(TA = +25
°C unless otherwise noted)
VDD to DGND, AGNDA, AGNDB . . . . . . . –0.3 V to +17 V
VSS
1 to DGND, AGNDA, AGNDB . . . . . . . +0.3 V to –17 V
VREFA, VREFB to AGNDA, AGNDB
. . . . . . . . . . . . . . . . . . . . . . . . . . VSS – 0.3 V to VDD + 0.3 V
AGNDA, AGNDB to DGND . . . . . . . –0.3 V to VDD + 0.3 V
VOUTA
2, V
OUTB
2 to AGNDA, AGNDB
. . . . . . . . . . . . . . . . . . . . . . . . . . VSS – 0.3 V to VDD + 0.3 V
RFBA
3, R
FBB
3 to AGNDA, AGNDB
. . . . . . . . . . . . . . . . . . . . . . . . . . VSS – 0.3 V to VDD + 0.3 V
Digital Inputs to DGND . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
Commercial/Industrial (A, B Versions) . . . –40
°C to +85°C
Extended (S Version) . . . . . . . . . . . . . . . . –55
°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . . 300
°C
Power Dissipation (Any Package) to +75
°C . . . . . . 1000 mW
Derates above +75
°C by . . . . . . . . . . . . . . . . . . . . 10 mW/°C
NOTES
1If V
SS is open circuited with VDD and either AGND applied, the V SS pin will float
positive, exceeding the Absolute Maximum Ratings. If this possibility exists, a
Schottky diode connected between VSS and AGND (cathode to AGND) ensures
the Maximum Ratings will be observed.
2The outputs may be shorted to voltages in this range provided the power dissipation
of the package is not exceeded.
3AD7837 only.
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device
reliability. Only one Absolute
Maximum Rating may be applied at any one time.
ORDERING GUIDE
Temperature
Relative
Package
Model
1
Range
Accuracy
Option
2
AD7837AN
–40
°C to +85°C
±1 LSB
N-24
AD7837BN
–40
°C to +85°C
±1/2 LSB
N-24
AD7837AR
–40
°C to +85°C
±1 LSB
R-24
AD7837BR
–40
°C to +85°C
±1/2 LSB
R-24
AD7837AQ
–40
°C to +85°C
±1 LSB
Q-24
AD7837BQ
–40
°C to +85°C
±1/2 LSB
Q-24
AD7837SQ
–55
°C to +125°C ±1 LSB
Q-24
AD7847AN
–40
°C to +85°C
±1 LSB
N-24
AD7847BN
–40
°C to +85°C
±1/2 LSB
N-24
AD7847AR
–40
°C to +85°C
±1 LSB
R-24
AD7847BR
–40
°C to +85°C
±1/2 LSB
R-24
AD7847AQ
–40
°C to +85°C
±1 LSB
Q-24
AD7847BQ
–40
°C to +85°C
±1/2 LSB
Q-24
AD7847SQ
–55
°C to +125°C ±1 LSB
Q-24
NOTES
1To order MIL-STD-883, Class B processed parts, add /883B to part number.
2N = Plastic DIP; Q = Cerdip; R = SOIC.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although these devices feature proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
(VDD = +15 V
5%, VSS = –15 V
5%, AGNDA = AGNDB = DGND = O V)
WARNING!
ESD SENSITIVE DEVICE
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相關(guān)代理商/技術(shù)參數(shù) |
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| AD7847AR/883B | 制造商:AD 制造商全稱:Analog Devices 功能描述:LC2MOS Complete, Dual 12-Bit MDACs |
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| AD7847ARQ | 制造商:AD 制造商全稱:Analog Devices 功能描述:LC2MOS Complete, Dual 12-Bit MDACs |
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