參數(shù)資料
型號: AD8016AREZ-REEL
廠商: Analog Devices Inc
文件頁數(shù): 18/21頁
文件大?。?/td> 0K
描述: IC LINE DRIVER ADSL 28TSSOP
標準包裝: 2,500
類型: 驅(qū)動器
驅(qū)動器/接收器數(shù): 2/0
規(guī)程: xDSL
電源電壓: 3 V ~ 13 V
安裝類型: 表面貼裝
封裝/外殼: 28-SOIC(0.173",4.40mm 寬)裸露焊盤
供應(yīng)商設(shè)備封裝: 28-HTSSOP
包裝: 帶卷 (TR)
Data Sheet
AD8016
Rev. C | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
26.4 V
Internal Power Dissipation
SOIC_W_BAT Package1
1.4 W
TSSOP_EP Package2
1.4 W
Input Voltage (Common-Mode)
±VS
Differential Input Voltage
±VS
Output Short-Circuit Duration
Observe power derating
curves
Storage Temperature Range
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature Range (Soldering 10 sec)
300°C
1 Specification is for device on a 4-layer board with 10 inches2 of 1 oz copper
at 85°C 24-lead SOIC_W_BAT package: θJA = 28°C/W.
2 Specification is for device on a 4-layer board with 9 inches2 of 1 oz copper at
85°C 28-lead (TSSOP_EP) package: θJA = 29°C/W.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8016 is limited by the associated rise in junction temper-
ature. The maximum safe junction temperature for a plastic
encapsulated device is determined by the glass transition
temperature of the plastic, approximately 150°C. Temporarily
exceeding this limit may cause a shift in parametric perfor-
mance due to a change in the stresses exerted on the die by
the package.
The output stage of the AD8016 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8016 to source or sink 2000 mA. To ensure
proper operation, it is necessary to observe the maximum
power derating curves. Direct connection of the output to
either power supply rail can destroy the device.
Figure 3. Maximum Power Dissipation vs. Temperature for AD8016 for
TJ = 125 °C
ESD CAUTION
AMBIENT TEMPERATURE (°C)
7
MA
XI
MU
M
P
O
W
E
R
D
IS
S
IP
A
TI
ON
(
W
)
6
5
4
3
2
1
0
010
SOIC_W_BAT
8
TSSOP-EP
20
30
40
50
60
70
80
90
01019-
005
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