參數(shù)資料
型號： AD8021ARZ-REEL7
廠商： Analog Devices Inc
文件頁數(shù)： 28/29頁
文件大?。?/td> 0K
描述： IC OPAMP VF LN LP LDIST 8SOIC
設(shè)計資源： Driving the AD7366/7 Bipolar SAR ADC in Low-Distortion DC-Coupled Appls (CN0042)
標準包裝： 1
放大器類型： 電壓反饋
電路數(shù)： 1
轉(zhuǎn)換速率： 460 V/µs
-3db帶寬： 560MHz
電流 - 輸入偏壓： 7.5µA
電壓 - 輸入偏移： 400µV
電流 - 電源： 7.8mA
電流 - 輸出 / 通道： 70mA
電壓 - 電源，單路/雙路(±)： 4.5 V ~ 24 V，±2.25 V ~ 12 V
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SO
包裝： 標準包裝
其它名稱： AD8021ARZ-REEL7DKR
AD8021
Rev. F | Page 7 of 28
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
26.4 V
Power Dissipation
Observed power
derating curves
Input Voltage (Common Mode)
±VS ± 1 V
Differential Input Voltage1
±0.8 V
Differential Input Current
±10 mA
Output Short-Circuit Duration
Observed power
derating curves
Storage Temperature Range
65°C to +125°C
Operating Temperature Range
40°C to +85°C
Lead Temperature (Soldering, 10 sec)
300°C
1 The AD8021 inputs are protected by diodes. Current-limiting resistors are
not used to preserve the low noise. If a differential input exceeds ±0.8 V, the
input current should be limited to ±10 mA.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8021 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately 150°C. Temporarily
exceeding this limit can cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8021 is internally short-circuit protected, this can
not be sufficient to guarantee that the maximum junction tem-
perature (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum
power derating curves.
AMBIENT TEMPERATURE (°C)
M
A
X
IM
UM
P
O
W
E
R
DI
S
IP
AT
IO
N
(
W
)
2.0
1.5
1.0
0.5
0.01
–55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85
8-LEAD SOIC
8-LEAD MSOP
0
188
8-
0
04
Figure 3. Maximum Power Dissipation vs. Temperature1
1 Specification is for device in free air: 8-lead SOIC: θJA = 125°C/W; 8-lead
MSOP:
θJA = 145°C/W.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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