參數(shù)資料
型號(hào)： AD8045ARDZ
廠商： Analog Devices Inc
文件頁(yè)數(shù)： 22/25頁(yè)
文件大?。?/td> 0K
描述： IC OPAMP VF ULDIST LN 70MA 8SOIC
產(chǎn)品培訓(xùn)模塊： Practical Guide High Speed PCB Layout
標(biāo)準(zhǔn)包裝： 98
放大器類型： 電壓反饋
電路數(shù)： 1
轉(zhuǎn)換速率： 1350 V/µs
-3db帶寬： 1GHz
電流 - 輸入偏壓： 2µA
電壓 - 輸入偏移： 200µV
電流 - 電源： 16mA
電流 - 輸出 / 通道： 70mA
電壓 - 電源，單路/雙路(±)： 3.3 V ~ 12 V，±1.65 V ~ 6 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm Width）裸露焊盤
供應(yīng)商設(shè)備封裝： 8-SOIC-EP
包裝： 管件
產(chǎn)品目錄頁(yè)面： 769 (CN2011-ZH PDF)
AD8045
Rev. A | Page 5 of 24
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Supply Voltage
12.6 V
Power Dissipation
Common-Mode Input Voltage
VS 0.7 V to +VS + 0.7 V
Differential Input Voltage
±V
S
Exposed Paddle Voltage
VS
Storage Temperature
65°C to +125°C
Operating Temperature Range
40°C to +125°C
Lead Temperature Range
(Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, i.e., θJA is specified
for device soldered in circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
θJA
θJC
Unit
SOIC
80
30
°C/W
LFCSP
93
35
°C/W
Maximum Power Dissipation
The maximum safe power dissipation for the AD8045 is limited
by the associated rise in junction temperature (TJ) on the die. At
approximately 150°C, which is the glass transition temperature,
the properties of the plastic change. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric perform-
ance of the AD8045. Exceeding a junction temperature of
175°C for an extended period of time can result in changes in
silicon devices, potentially causing degradation or loss of
functionality.
The power dissipated in the package (PD) is the sum of the qui-
escent power dissipation and the power dissipated in the die
due to the AD8045 drive at the output. The quiescent power is
the voltage between the supply pins (VS) times the quiescent
current (IS).
PD = Quiescent Power + (Total Drive Power – Load Power)
()
L
2
OUT
L
OUT
S
D
R
V
–
R
V
2
V
I
V
P
×
+
×
=
RMS output voltages should be considered. If
RL is referenced to
VS, as in single-supply operation, the total drive power is VS ×
IOUT. If the rms signal levels are indeterminate, consider the
worst case, when
VOUT = VS/4 for RL to midsupply.
() (
)
L
S
D
R
/
V
I
V
P
2
4
+
×
=
In single-supply operation with RL referenced to VS, worst case
is VOUT = VS/2.
Airflow increases heat dissipation, effectively reducing θJA.
Also, more metal directly in contact with the package leads and
exposed paddle from metal traces, through holes, ground, and
power planes reduce θJA.
Figure 4 shows the maximum safe power dissipation in the
package versus the ambient temperature for the exposed paddle
SOIC (80°C/W) and LFCSP (93°C/W) package on a JEDEC
standard 4-layer board. θJA values are approximations.
04814-0-080
AMBIENT TEMPERATURE (°C)
120
–40
–20
0
20
40
60
80
100
M
A
XIM
U
M
POW
E
R
D
ISSIPA
TION
(
W
at
ts
)
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
LFCSP
SOIC
Figure 4. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy elec-
trostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation
and loss of functionality.
相關(guān)PDF資料
PDF描述
0388005.MXEP FUSE 250V PT FA 3AG METI B 5A
AD8202YRZ IC AMP DIFF 50KHZ 8SOIC
RMCF2512FT150R RES TF 150 OHM 1% 1W 2512
AD8662ARZ IC OPAMP GP R-R CMOS 4MHZ 8SOIC
RMCF2512FT42K2 RES TF 42.2K OHM 1% 1W 2512
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AD8045ARDZ-REEL 功能描述:IC OPAMP VF ULDIST LN 70MA 8SOIC RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 放大器類型:電壓反饋 電路數(shù):4 輸出類型:滿擺幅 轉(zhuǎn)換速率:33 V/µs 增益帶寬積:20MHz -3db帶寬:30MHz 電流 - 輸入偏壓:2nA 電壓 - 輸入偏移:3000µV 電流 - 電源:2.5mA 電流 - 輸出 / 通道:30mA 電壓 - 電源，單路/雙路(±):4.5 V ~ 16.5 V，±2.25 V ~ 8.25 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:14-SOIC 包裝:帶卷 (TR)
AD8045ARDZ-REEL7 功能描述:IC OPAMP VF ULDIST LN 70MA 8SOIC RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 放大器類型:電壓反饋 電路數(shù):4 輸出類型:滿擺幅 轉(zhuǎn)換速率:33 V/µs 增益帶寬積:20MHz -3db帶寬:30MHz 電流 - 輸入偏壓:2nA 電壓 - 輸入偏移:3000µV 電流 - 電源:2.5mA 電流 - 輸出 / 通道:30mA 電壓 - 電源，單路/雙路(±):4.5 V ~ 16.5 V，±2.25 V ~ 8.25 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:14-SOIC 包裝:帶卷 (TR)
AD8045AR-REEL7 制造商:Analog Devices 功能描述:ULTRA-LOW DISTORTION HIGH SPEED AMPLIFIER - Tape and Reel
AD8047 制造商:AD 制造商全稱:Analog Devices 功能描述:250 MHz, General Purpose Voltage Feedback Op Amps
AD8047_03 制造商:AD 制造商全稱:Analog Devices 功能描述:250 MHz, General Purpose Voltage Feedback Op Amps
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*