參數(shù)資料
型號: ADG1236YCPZ-500RL7
廠商: Analog Devices Inc
文件頁數(shù): 1/16頁
文件大?。?/td> 0K
描述: IC SWITCH DUAL SPDT 12LFCSP
產(chǎn)品培訓(xùn)模塊: iCMOS™ Switches and Multiplexers for Data Acquisition
Switch Fundamentals
標(biāo)準(zhǔn)包裝: 1
系列: iCMOS®
功能: 開關(guān)
電路: 2 x SPDT - NC/NO
導(dǎo)通狀態(tài)電阻: 475 歐姆
電壓電源: 單/雙電源
電壓 - 電源,單路/雙路(±): 12V,±15V
電流 - 電源: 170µA
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 12-VFQFN 裸露焊盤,CSP
供應(yīng)商設(shè)備封裝: 12-LFCSP-VQ
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁面: 801 (CN2011-ZH PDF)
其它名稱: ADG1236YCPZ-500RL7DKR
Low Capacitance, Low Charge Injection,
±15 V/12 V iCMOS, Dual SPDT Switch
ADG1236
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringements of patents or other
rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
2005 Analog Devices, Inc. All rights reserved.
FEATURES
1.3 pF off capacitance
3.5 pF on capacitance
1 pC charge injection
33 V supply range
120 Ω on resistance
Fully specified at +12 V, ±15 V
No VL supply required
3 V logic-compatible inputs
Rail-to-rail operation
16-lead TSSOP and 12-lead LFCSP packages
Typical power consumption: <0.03 μW
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Audio/video signal routing
Communication systems
FUNCTIONAL BLOCK DIAGRAM
ADG1236
D1
D2
S2B
S2A
IN2
IN1
S1B
S1A
SWITCHES SHOWN FOR A LOGIC 1 INPUT
04776-001
Figure 1.
GENERAL DESCRIPTION
The ADG1236 is a monolithic CMOS device containing two
independently selectable SPDT switches. It is designed on an
iCMOS process. iCMOS (industrial CMOS) is a modular
manufacturing process combining high voltage complementary
metal-oxide semiconductor (CMOS) and bipolar technologies.
It enables the development of a wide range of high performance
analog ICs capable of 33 V operation in a footprint that no
previous generation of high voltage parts has been able to
achieve. Unlike analog ICs using conventional CMOS processes,
iCMOS components can tolerate high supply voltages while
providing increased performance, dramatically lower power
consumption, and reduced package size.
The ultralow capacitance and charge injection of the part make
it an ideal solution for data acquisition and sample-and-hold
applications, where low glitch and fast settling are required. Fast
switching speed coupled with high signal bandwidth makes the
part suitable for video signal switching. iCMOS construction
ensures ultralow power dissipation, making the part ideally
suited for portable and battery-powered instruments.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. In the
off condition, signal levels up to the supplies are blocked. Both
switches exhibit break-before-make switching action for use in
multiplexer applications.
PRODUCT HIGHLIGHTS
1.
1.3 pF off capacitance (±15 V supply).
2.
1 pC charge injection.
3.
3 V logic-compatible digital inputs: VIH = 2.0 V, VIL = 0.8 V.
4.
No VL logic power supply required.
5.
Ultralow power dissipation: <0.03 μW.
6.
16-lead TSSOP and 12-lead 3 mm × 3 mm LFCSP packages.
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