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參數(shù)資料
型號: ADG636YRUZ
廠商: Analog Devices Inc
文件頁數(shù): 12/16頁
文件大?。?/td> 0K
描述: IC SWITCH DUAL SPDT 14TSSOP
產(chǎn)品培訓(xùn)模塊: iCMOS™ Switches and Multiplexers for Data Acquisition
Switch Fundamentals
標(biāo)準(zhǔn)包裝: 96
功能: 開關(guān)
電路: 2 x SPDT - NC/NO
導(dǎo)通狀態(tài)電阻: 290 歐姆
電壓電源: 單/雙電源
電壓 - 電源,單路/雙路(±): 2.7 V ~ 5.5 V,±2.7 V ~ 5.5 V
電流 - 電源: 1nA
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 14-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 14-TSSOP
包裝: 管件
產(chǎn)品目錄頁面: 803 (CN2011-ZH PDF)
ADG636
Rev. B | Page 5 of 16
SINGLE SUPPLY
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V. All specifications 40°C to +125°C, unless otherwise noted.
Table 2.
Parameter
+25°C
40°C to +85°C
40°C to +125°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
VDD = 4.5 V, VSS = 0 V
On Resistance, RON
210
Ω typ
VS = 3.5 V, IDS = 1 mA, Figure 14
290
350
380
Ω max
VS = 3.5 V, IDS = 1 mA, Figure 14
On Resistance Match Between Channels, ΔRON
3
Ω typ
VS = 3.5 V, IDS = 1 mA
12
13
Ω max
VS = 3.5 V, IDS = 1 mA
LEAKAGE CURRENTS
VDD = 5.5 V
Source Off Leakage, IS (Off )
±0.01
nA typ
VS = 1 V/4.5 V, VD = 4.5 V/1 V,
±0.1
±0.25
±2
nA max
VS = 1 V/4.5 V, VD = 4.5 V/1 V,
Drain Off Leakage, ID (Off )
±0.01
nA typ
VS = 1 V/4.5 V, VD = 4.5 V/1 V,
±0.1
±0.25
±2
nA max
VS = 1 V/4.5 V, VD = 4.5 V/1 V,
Channel On Leakage, ID (On), IS (On)
±0.01
nA typ
VS = VD = 4.5 V/1 V, Figure 16
±0.1
±0.25
±6
nA max
VS = VD = 4.5 V/1 V, Figure 16
DIGITAL INPUTS
Input High Voltage, VINH
2.4
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±0.1
μA max
VIN = VINL or VINH
Digital Input Capacitance, CIN
2
pF typ
DYNAMIC CHARACTERISTICS1
Transition Time
90
ns typ
VS1A = 3 V, VS1B = 0 V, RL = 300 Ω,
CL = 35 pF, Figure 17
150
185
210
ns max
VS1A = 3 V, VS1B = 0 V, RL = 300 Ω,
CL = 35 pF, Figure 17
tON Enable
135
ns typ
RL = 300 Ω, CL = 35 pF, VS = 3 V,
180
235
275
ns max
RL = 300 Ω, CL = 35 pF, VS = 3 V,
tOFF Enable
70
ns typ
RL = 300 Ω, CL = 35 pF, VS = 3 V,
105
120
135
ns max
RL = 300 Ω, CL = 35 pF, VS = 3 V,
Break-Before-Make Time Delay, tBBM
30
ns typ
RL = 300 Ω, CL = 35 pF, VS = 3 V,
10
ns min
RL = 300 Ω, CL = 35 pF, VS = 3 V,
Charge Injection
0.3
pC typ
VS = 0 V, RS = 0 Ω, CL = 1 nF,
Off Isolation
60
dB typ
RL = 50 Ω, CL = 5 pF, f = 10 MHz,
Channel-to-Channel Crosstalk
65
dB typ
RL = 50 Ω, CL = 5 pF, f = 10 MHz,
Bandwidth 3 dB
530
MHz typ
RL = 50 Ω, CL = 5 pF, Figure 22
CS (Off )
5
pF typ
f = 1 MHz
CD (Off )
8
pF typ
f = 1 MHz
CD (On), CS (On)
8
pF typ
f = 1 MHz
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