ADG858
Rev. A | Page 3 of 16
SPECIFICATIONS
VDD = 4.2 V to 5.5 V, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
+25°C
40°C to +85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 to VDD
V
On Resistance, RON
0.58
Ω typ
VDD = 4.2 V, VS = 0 V to VDD, IS = 100 mA, see Figure 16 0.72
0.82
Ω max
On-Resistance Match Between Channels, ΔRON
0.04
Ω typ
VDD = 4.2 V, VS = 2 V, IS = 100 mA
0.14
Ω max
On-Resistance Flatness, RFLAT (ON)
0.12
Ω typ
VDD = 4.2 V, VS = 0 V to VDD
0.26
Ω max
IS = 100 mA
LEAKAGE CURRENTS
VDD = 5.5 V
Source Off Leakage, IS (Off )
±10
pA typ
VS = 0.6 V/4.2 V, VD = 4.2 V/0.6 V, see Figure 17 Channel On Leakage, ID, IS (On)
±10
pA typ
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
0.004
μA typ
VIN = VGND or VDD
0.05
μA max
Digital Input Capacitance, CIN
2
pF typ
tON
20
ns typ
RL = 50 Ω, CL = 35 pF
27
36
ns max
tOFF
8
ns typ
RL = 50 Ω, CL = 35 pF
12
13
ns max
Break-Before-Make Time Delay, tBBM
14
ns typ
RL = 50 Ω, CL = 35 pF
9
ns min
Charge Injection
45
pC typ
VS = 1.5 V, RS = 0 Ω, CL = 1 nF, see Figure 21 Off Isolation
67
dB typ
RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 22 Channel-to-Channel Crosstalk
85
dB typ
S1A to S2A/S1B to S2B/S3A to S4A/S3B to S4B,
RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 25 67
dB typ
S1A to S1B/S2A to S2B/S3A to S3B/S4A to S4B,
RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 24 Total Harmonic Distortion, THD + N
0.06
%
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p
Insertion Loss
0.05
dB typ
3 dB Bandwidth
70
MHz typ
CS (Off )
25
pF typ
CD, CS (On)
75
pF typ
POWER REQUIREMENTS
VDD = 5.5 V
IDD
0.003
μA typ
Digital inputs = 0 V or 5.5 V
1
μA max
1 Guaranteed by design, not subject to production test.