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參數(shù)資料
| 型號： | ADM690-ADM695 |
| 英文描述： | Microprocessor Supervisory Circuits |
| 中文描述： | 微處理器監(jiān)控電路 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 283K |
| 代理商： | ADM690-ADM695 |
ADM690–ADM695
REV. A
–10–
+APPLICAT ION INFORMAT ION
Increasing the Drive Current
If the continuous output current requirements at V
OUT
exceed
100 mA or if a lower V
CC
–V
OUT
voltage differential is desired,
an external PNP pass transistor may be connected in parallel
with the internal transistor. T he BAT T ON output (ADM691/
ADM693/ADM695) can directly drive the base of the external
transistor.
V
OUT
V
CC
BATTERY
+5V
INPUT
POWER
0.1
μ
F
0.1
μ
F
BATT
ON
V
BATT
PNP TRANSISTOR
ADM691
ADM693
ADM695
Figure 17. Increasing the Drive Current
Using a Rechargeable Battery for Back Up
If a capacitor or a rechargeable battery is used for back up then
the charging resistor should be connected to V
OUT
since this
eliminates the discharge path that would exist during power
down if the resistor is connected to V
CC
.
V
OUT
V
CC
RECHARGEABLE
BATTERY
+5V
INPUT
POWER
0.1
μ
F
0.1
μ
F
V
BATT
ADM69x
R
I =
V
OUT
– V
BATT
R
Figure 18. Rechargeable Battery
Adding Hysteresis to the Power Fail Comparator
For increased noise immunity, hysteresis may be added to the
power fail comparator. Since the comparator circuit is nonin-
verting, hysteresis can be added simply by connecting a resistor be-
tween the
PFO
output and the PFI input as shown in Figure 19.
When
PFO
is low, resistor R
3
sinks current from the summing
junction at the PFI pin. When
PFO
is high, the series combina-
tion of R
3
and R
4
source current into the PFI summing junc-
tion. T his results in differing trip levels for the comparator.
ADM69x
R
2
1.3V
PFO
R
1
7805
R
4
R
3
+7V TO +15V
INPUT
POWER
+5V
PFI
V
CC
TO
μ
P NMI
5V
0V
0V
V
L
V
H
V
IN
PFO
V
H
= 1.3V
(
1+ R
)
V
L
= 1.3V
(
1+ R
)
2
ASSUMING R
4 < <
R
3
THEN
HYSTERESIS V
H
– V
L
= 5V
(
R
)
1
R
2
R
1
R
3
R
1
1
R
2
R
1
(5V – 1.3V)
1.3V (R
3 +
R
4
)
Figure 19. Adding Hysteresis to the Power Fail Comparator
Monitoring the Status of the Battery
T he power fail comparator can be used to monitor the status of
the backup battery instead of the power supply if desired. T his
is shown in Figure 20. T he PFI input samples the battery volt-
age and generates an active low
PFO
signal when the battery
voltage drops below a chosen threshold. It may be necessary to
apply a test load in order to determine the loaded battery volt-
age. T his can be done under processor control using
CE
OUT .
Since
CE
OUT
is forced high during the battery backup mode, the
test load will not be applied to the battery while it is in use, even
if the microprocessor is not powered.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADM690AN | 功能描述:IC SUPERVISOR MPU 4.65 WD 8DIP RoHS:否 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 類型:簡單復(fù)位/加電復(fù)位 監(jiān)視電壓數(shù)目:1 輸出:開路漏極或開路集電極 復(fù)位:高有效 復(fù)位超時:- 電壓 - 閥值:1.8V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:6-TSOP（0.059"，1.50mm 寬）5 引線 供應(yīng)商設(shè)備封裝:5-TSOP 包裝:剪切帶 (CT) 其它名稱:NCP301HSN18T1GOSCT |
| ADM690ANZ | 功能描述:IC SUPERVISOR MPU 4.65 WD 8DIP RoHS:是 類別:集成電路 (IC) >> PMIC - 監(jiān)控器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 類型:簡單復(fù)位/加電復(fù)位 監(jiān)視電壓數(shù)目:1 輸出:開路漏極，開路漏極 復(fù)位:高有效/低有效 復(fù)位超時:最小為 250 ms 電壓 - 閥值:4.37V，4.62V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1337 (CN2011-ZH PDF) |
| ADM690ANZ | 制造商:Analog Devices 功能描述:Microprocessor Supervisor |
| ADM690AQ | 制造商:AD 制造商全稱:Analog Devices 功能描述:Microprocessor Supervisory Circuits |
| ADM690ARM | 功能描述:Supervisor Push-Pull, Totem Pole 1 Channel 16-SOIC 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):上次購買時間 類型:備用電池電路 受監(jiān)控電壓數(shù):1 輸出:推挽式，圖騰柱 復(fù)位:低有效 復(fù)位超時:最小為 35 ms 電壓 - 閾值:4.65V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:16-SOIC 標(biāo)準(zhǔn)包裝:1 |
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