參數(shù)資料
型號: ADS8616A8A-75
廠商: ADATA Technology Co., Ltd.
英文描述: Synchronous DRAM(4M X 16 Bit X 4 Banks)
中文描述: 同步DRAM(4米× 16位× 4個銀行)
文件頁數(shù): 3/8頁
文件大小: 550K
代理商: ADS8616A8A-75
A-Data
ADS8616A8A
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
out
-0.3 ~VDD+0.3
V
Voltage on VDD supply relative to Vss
V
DD
, V
DDQ
-0.3 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
Power dissipation
P
D
1
W
Short circuit current
I
OUT
50
mA
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Condition
Voltage referenced to Vss = 0V, T
A
= 0 to 70
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
Input logic high voltage
V
IH
2.0
3.0
V
DD
+0.3
V
2
Input logic low voltage
V
IL
-0.3
-
0.8
V
2
Note :
1. V
IH
(max)=Vcc/ VccQ+1.2V for pulse width
5ns acceptable.
2.V
IL
(min)=-Vss/ VssQ-1.2V for pulse width
5ns acceptable.
AC Operating Condition
Voltage referenced to Vss = 0V, T
A
= 0 to 70
Parameter
Symbol
Value
Unit
Note
AC input high / low level voltage
V
IH
/ V
IL
2.4 / 0.4
V
Input timing measurement reference level voltage
Vtrip
1.4
V
Input rise / fall time
TR / tF
2
Ns
Output timing measurement reference level
Voutfef
1.4
V
Output load capacitance for access time measurement
CL
50
pF
2
Note:
1. 3.15V
V
DD
3.6V is applied for ADS8616A8A55.
2. Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF). For details,
refer to AC/DC output load circuit.
Rev 1.0 December, 2001
3
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