REV. 0
ADSP-2186M
–19–
ABSOLUTE MAXIMUM RATINGS
1
Value
Parameter
Min
Max
Internal Supply Voltage (VDDINT)
–0.3 V
+3.0 V
External Supply Voltage (VDDEXT)
–0.3 V
+4.0 V
Input Voltage
2
–0.5 V
+4.0 V
Output Voltage Swing
3
–0.5 V
VDDEXT + 0.5 V
Operating Temperature Range
–40
°C
+85
°C
Storage Temperature Range
–65
°C
+150
°C
Lead Temperature (5 sec) LQFP
280
°C
NOTES
1Stresses greater than those listed may cause permanent damage to the device.
These are stress ratings only; functional operation of the device at these or any other
conditions greater than those indicated in the operational sections of this specifi-
cation is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
2Applies to Bidirectional pins (D0–D23, RFS0, RFS1, SCLK0, SCLK1, TFS0,
TFS1, A1–A13, PF0–PF7) and Input only pins (CLKIN,
RESET, BR, DR0,
DR1,
PWD).
3Applies to Output pins (
BG, PMS, DMS, BMS, IOMS, CMS, RD, WR, PWDACK,
A0, DT0, DT1, CLKOUT, FL2–0,
BGH).
TIMING SPECIFICATIONS
GENERAL NOTES
Use the exact timing information given. Do not attempt to
derive parameters from the addition or subtraction of others.
While addition or subtraction would yield meaningful results for
an individual device, the values given in this data sheet reflect
statistical variations and worst cases. Consequently, you cannot
meaningfully add up parameters to derive longer times.
TIMING NOTES
Switching characteristics specify how the processor changes its
signals. You have no control over this timing—circuitry external
to the processor must be designed for compatibility with these
signal characteristics. Switching characteristics tell you what the
processor will do in a given circumstance. You can also use
switching characteristics to ensure that any timing require-
ment of a device connected to the processor (such as memory)
is satisfied.
Timing requirements apply to signals that are controlled by
circuitry external to the processor, such as the data input for a
read operation. Timing requirements guarantee that the proces-
sor operates correctly with other devices.
MEMORY TIMING SPECIFICATIONS
The table below shows common memory device specifications
and the corresponding ADSP-2186M timing parameters, for
your convenience.
Memory
Timing
Device
Parameter
Specification
Parameter Definition
1
Address Setup to
tASW
A0–A13,
xMS Setup before
Write Start
WR Low
Address Setup to
tAW
A0–A13,
xMS Setup before
Write End
WR Deasserted
Address Hold Time
tWRA
A0–A13,
xMS Hold before
WR Low
Data Setup Time
tDW
Data Setup before
WR
High
Data Hold Time
tDH
Data Hold after
WR High
OE to Data Valid
tRDD
RD Low to Data Valid
Address Access Time tAA
A0–A13,
xMS to Data Valid
NOTE
1
xMS = PMS, DMS, BMS, CMS or IOMS.
ESD SENSITIVITY
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADSP-2186M features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE