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參數(shù)資料
| 型號： | ADUC832BCPZ |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 40/92頁 |
| 文件大小： | 0K |
| 描述： | IC MCU 62K FLASH ADC/DAC 56LFCSP |
| 標準包裝： | 1 |
| 系列： | MicroConverter® ADuC8xx |
| 核心處理器： | 8052 |
| 芯體尺寸： | 8-位 |
| 速度： | 16MHz |
| 連通性： | EBI/EMI，I²C，SPI，UART/USART |
| 外圍設備： | PSM，溫度傳感器，WDT |
| 輸入/輸出數(shù)： | 34 |
| 程序存儲器容量： | 62KB（62K x 8） |
| 程序存儲器類型： | 閃存 |
| EEPROM 大?。?/td> | 4K x 8 |
| RAM 容量： | 2.25K x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 數(shù)據(jù)轉換器： | A/D 8x12b，D/A 2x12b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 56-VFQFN 裸露焊盤，CSP |
| 包裝： | 托盤 |
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Data Sheet
ADuC832
Rev. B | Page 45 of 92
NONVOLATILE FLASH/EE MEMORY
FLASH/EE MEMORY OVERVIEW
The ADuC832 incorporates Flash/EE memory technology on
chip to provide the user with nonvolatile, in-circuit, reprogramma-
ble code and data memory space. Flash/EE memory is a relatively
recent type of nonvolatile memory technology and is based on a
single transistor cell architecture.
This technology is basically an outgrowth of EPROM technol-
ogy and was developed through the late 1980s. Flash/EE memory
takes the flexible in-circuit reprogrammable features of EEPROM
and combines them with the space efficient/density features of
EPROM (see Figure 47).
Because Flash/EE technology is based on a single transistor cell
architecture, a Flash memory array, like EPROM, can be imple-
mented to achieve the space efficiencies or memory densities
required by a given design. Like EEPROM, Flash memory can
be programmed in-system at a byte level, although it must first
be erased, the erase being performed in page blocks. Thus, Flash
memory is often and more correctly referred to as Flash/EE
memory.
FLASH/EE MEMORY
TECHNOLOGY
SPACE EFFICIENT/
DENSITY
IN-CIRCUIT
REPROGRAMMABLE
EPROM
TECHNOLOGY
EEPROM
TECHNOLOGY
02987-
036
Figure 47. Flash/EE Memory Development
Overall, Flash/EE memory represents a step closer to the
ideal memory device that includes nonvolatility, in-circuit
programmability, high density, and low cost. Incorporated in
the ADuC832, Flash/EE memory technology allows the user
to update program code space in-circuit, without the need to
replace one-time programmable (OTP) devices at remote
operating nodes.
FLASH/EE MEMORY AND THE ADUC832
The ADuC832 provides two arrays of Flash/EE memory for
user applications. There are 62 kB of Flash/EE program space
provided on chip to facilitate code execution without any
external discrete ROM device requirements. The program
memory can be programmed in-circuit using the serial down-
load mode provided, using conventional third party memory
programmers, or via a user defined protocol that can configure
it as data if required.
A 4 kB Flash/EE data memory space is also provided on chip.
This can be used as a general-purpose nonvolatile scratchpad
area. User access to this area is via a group of six SFRs. This
space can be programmed at the byte level, although it must
first be erased in 4-byte pages.
ADUC832 FLASH/EE MEMORY RELIABILITY
The Flash/EE program and data memory arrays on the
ADuC832 are fully qualified for two key Flash/EE memory
characteristics, namely Flash/EE memory cycling endurance
and Flash/EE memory data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single Flash/EE memory endurance cycle is composed
of the following four independent, sequential events:
Initial page erase sequence
Read/verify sequence
Byte program sequence
Second read/verify sequence
In reliability qualification, every byte in both the program and
data Flash/EE memory is cycled from 00H to FFH until a first
fail is recorded, signifying the endurance limit of the on-chip
Flash/EE memory.
As indicated in the Specifications section, the ADuC832 Flash/
EE memory endurance qualification has been carried out in
accordance with JEDEC Specification A117 over the industrial
temperature range of 40°C to +25°C and +85°C to +125°C. The
results allow the specification of a minimum endurance value
over supply and temperature of 100,000 cycles, with an endur-
ance value of 700,000 cycles being typical of operation at 25°C.
Retention quantifies the ability of the Flash/EE memory to
retain its programmed data over time. Again, the ADuC832 has
been qualified in accordance with the formal JEDEC retention
lifetime specification (A117) at a specific junction temperature
(TJ = 55°C). As part of this qualification procedure, the Flash/
EE memory is cycled to its specified endurance limit described
previously, before data retention is characterized. This means
that the Flash/EE memory is guaranteed to retain its data for its
full specified retention lifetime every time the Flash/EE memory is
reprogrammed. It should also be noted that retention lifetime,
based on an activation energy of 0.6 eV, derates with TJ, as shown
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| ADUC832BCPZ-REEL | 功能描述:IC MCU 62K FLASH ADC/DAC 56LFCSP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 標準包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設備:欠壓檢測/復位，LED，POR，PWM，WDT 輸入/輸出數(shù):16 程序存儲器容量:4KB（4K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數(shù)據(jù)轉換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND |
| ADUC832BS | 制造商:Analog Devices 功能描述:MCU 8-Bit ADuC8xx 8052 CISC 62KB Flash 3.3V/5V 52-Pin MQFP 制造商:Rochester Electronics LLC 功能描述:8BIT CISC 62KB FLASH 16.78MHZ 3.3/5V 52MQFP - Bulk 制造商:Analog Devices 功能描述:8BIT MCU +12BIT ADC LQFP52 832 |
| ADUC832BS-REEL | 制造商:Analog Devices 功能描述:MCU 8-Bit ADuC8xx 8052 CISC 62KB Flash 3.3V/5V 52-Pin MQFP T/R |
| ADUC832BSZ | 功能描述:IC ADC/DAC 12BIT W/MCU 52MQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 標準包裝:250 系列:56F8xxx 核心處理器:56800E 芯體尺寸:16-位 速度:60MHz 連通性:CAN，SCI，SPI 外圍設備:POR，PWM，溫度傳感器，WDT 輸入/輸出數(shù):21 程序存儲器容量:40KB（20K x 16） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:6K x 16 電壓 - 電源 (Vcc/Vdd):2.25 V ~ 3.6 V 數(shù)據(jù)轉換器:A/D 6x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:48-LQFP 包裝:托盤 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323 |
| ADUC832BSZ-REEL | 功能描述:IC MCU 62K FLASH ADC/DAC 52MQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 標準包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設備:欠壓檢測/復位，LED，POR，PWM，WDT 輸入/輸出數(shù):16 程序存儲器容量:4KB（4K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數(shù)據(jù)轉換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND |
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