Revision 17 2-59 Timing Characteristics 1.5 V DC Core Voltage 1.2 V DC Core Voltage Table" />
參數(shù)資料
型號(hào): AGLN125V5-CSG81
廠商: Microsemi SoC
文件頁數(shù): 124/150頁
文件大小: 0K
描述: IC FPGA NANO 1KB 125K 81-CSP
標(biāo)準(zhǔn)包裝: 640
系列: IGLOO nano
邏輯元件/單元數(shù): 3072
RAM 位總計(jì): 36864
輸入/輸出數(shù): 60
門數(shù): 125000
電源電壓: 1.425 V ~ 1.575 V
安裝類型: 表面貼裝
工作溫度: -20°C ~ 70°C
封裝/外殼: 81-WFBGA,CSBGA
供應(yīng)商設(shè)備封裝: 81-CSP(5x5)
IGLOO nano Low Power Flash FPGAs
Revision 17
2-59
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-84 Combinatorial Cell Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Combinatorial Cell
Equation
Parameter
Std.
Units
INV
Y = !A
tPD
0.76
ns
AND2
Y = A B
tPD
0.87
ns
NAND2
Y = !(A B)
tPD
0.91
ns
OR2
Y = A + B
tPD
0.90
ns
NOR2
Y = !(A + B)
tPD
0.94
ns
XOR2
Y = A
Bt
PD
1.39
ns
MAJ3
Y = MAJ(A, B, C)
tPD
1.44
ns
XOR3
Y = A
B Ct
PD
1.60
ns
MUX2
Y = A !S + B S
tPD
1.17
ns
AND3
Y = A B C
tPD
1.18
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-85 Combinatorial Cell Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V
Combinatorial Cell
Equation
Parameter
Std.
Units
INV
Y = !A
tPD
1.33
ns
AND2
Y = A B
tPD
1.48
ns
NAND2
Y = !(A B)
tPD
1.58
ns
OR2
Y = A + B
tPD
1.53
ns
NOR2
Y = !(A + B)
tPD
1.63
ns
XOR2
Y = A
Bt
PD
2.34
ns
MAJ3
Y = MAJ(A, B, C)
tPD
2.59
ns
XOR3
Y = A
B Ct
PD
2.74
ns
MUX2
Y = A !S + B S
tPD
2.03
ns
AND3
Y = A B C
tPD
2.11
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-7 for derating values.
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