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參數(shù)資料
| 型號： | AGR19030EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 207K |
| 代理商： | AGR19030EU |
6
Agere Systems Inc.
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
April 2004
AGR19030E
Preliminary Data Sheet
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, IDQ = 350 mA, pulsed CW, 4 s (on), 40 s (off), center frequency = 1960 MHz.
Figure 4. CW POUT vs. PIN
Test Conditions:
VDD = 28 Vdc, IDQ = 350 mA, f = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spac-
ing (BW) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz).
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. POUT
25
30
35
40
45
50
10
15
20
25
30
35
PIN (dBm)?
P
OU
T(dBm
)Z
7
8
9
10
11
12
13
14
15
16
17
G
PS
(dB)
Z
P1dB = 45.74 dBm (37.50 W)
P3dB = 46.59 dBm (45.60 W)
POUT
GPS
0
5
10
15
20
25
30
35
40
45
50
25
30
35
40
45
POUT (dBm) Avg.Z
G
PS
(
d
B
),
η
(%)
Z
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
ACPR
(d
Bc)
Z
GPS
885 kHz
2.25 MHz
η
1.25 MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19045EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19060E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
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