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參數(shù)資料
| 型號： | AGR19045EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 225K |
| 代理商： | AGR19045EF |
Agere Systems Inc.
9
Preliminary Data Sheet
AGR19045EF
June 2004
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 26 Vdc, IDQ = 400 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM Average vs. POUT
Test Conditions:
VDD = 28 Vdc, IDQ = 400 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM Average vs. POUT
0
5
10
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25
30
35
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45
50
55
0
5
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POUT (W) AVERAGEZ
G
PS
(
d
B
),
η
(%
),
E
V
M
(%
)Z
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
SP
EC
T
R
A
L
R
E
G
R
O
W
T
H
(
d
B
c
)Z
EVM
GPS
600 kHz
400 kHz
η
0
5
10
15
20
25
30
35
40
45
50
55
0
5
10
15
20
25
30
35
40
POUT(W) AVERAGEZ
G
PS
(
d
B
),
η
(
%
),
E
V
M
(%
)Z
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
S
PEC
T
R
AL
R
EG
R
O
W
TH
(
d
B
c
)Z
EVM
GPS
600kHz
400kHz
η
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| AGR19045EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19060E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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