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參數(shù)資料
| 型號(hào)： | AGR19045EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁(yè)數(shù)： | 9/11頁(yè) |
| 文件大?。?/td> | 225K |
| 代理商： | AGR19045EF |
Agere Systems Inc.
7
Preliminary Data Sheet
AGR19045EF
June 2004
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz. 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz bandwidth. Peak/average = 9.72 dB @
0.01% probability (CCDF). Channel spacing (bandwidth); ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. Power
Test Conditions:
VDD = 28 VDC, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2-carrier N-CDMA measurement.
Figure 7. 2-Carrier N-CDMA, GPS vs. POUT
0
5
10
15
20
25
30
35
40
45
50
55
60
30
35
40
45
POUT(dBm)Z
G
PS
(
d
B
),
η
(%
)Z
-70
-60
-50
-40
-30
-20
-10
IM
3
(d
B
c
),
A
C
P
R
(d
B
c
)Z
ACP
GPS
η
IM3
13.25
14.25
15.25
30
35
40
45
POUT(dBm)Z
G
PS
(d
B
)Z
IDQ= 300 mA
IDQ= 600 mA
IDQ= 550 mA
IDQ= 500 mA
IDQ= 400 mA
IDQ= 700 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19060E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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