- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42888 > AGR19090EU L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | AGR19090EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 209K |
| 代理商： | AGR19090EU |
4
Agere Systems Inc.
90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
April 2004
AGR19090E
Preliminary Data Sheet
Test Circuit Illustrations for AGR19090E
A. Schematic
B. Component Layout
Parts List:
s
Microstrip line: Z1 0.390 in. x 0.065 in.; Z2 0.300 in. x 0.065 in.; Z3 0.070 in. x 0.065 in.; Z4 0.400 in. x 0.260 in.; Z5 0.100 in. x 0.540 in.;
Z6 0.160 in. x 0.770 in.; Z7 0.275 in. x 1.160 in.; Z8 0.550 in. x 1.130 in.; Z9 0.300 in. x 0.205 in.; Z10 0.120 in. x 0.065 in.;
Z11 0.165 in. x 0.065 in.; Z12 0.555 in. x 0.065 in.; Z13 0.185 in. x 0.030 in.; Z14 0.845 in. x 0.050 in.
s
ATC B case chip capacitors: C1, C2, 10 pF, 100B100JCA500X; C7, C11, 8.2 pF, 100B8R2CA500X.
s
Sprague tantalum SMT: C9, C10, C15 22 F, 35 V.
s
Kemet: B case chip capacitors: C3, C14 0.10 F, CDR33BX104AKWS; tantalum capacitor: C16, 1 F, 50 V T491C.
s
Vitramon 1206: C5, C12: 22000 pF.
s
Murata: 0805: C4, C13 0.01 F, GRM40X7R103K100AL.
s
0603: C12 220 pF.
s
Johanson Giga-Trim variable capacitors: C8, C18 0.4 pF—2.5 pF.
s
Fixed film chip resistors (0.25 W, 0.08 x 0.13): R2 4.7
; R3 1.02 k; R4 560 k.
s
Fair-Rite ferrite bead: FB1: 2743019447.
s
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
Figure 2. AGR19090E Test Circuit
DUT
R2
C10
R4
R3
C3
FB1
Z7
Z1
C1
Z2
Z3
Z4
C13
C12
C11
Z14
C5
C4
C14
C7
RF INPUT
VGG
VDD
RF
C8
OUTPUT
1
2
3
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
Z5
Z6
Z8
Z9
Z10
Z11
C2
C16
C15
+
C16
C17
C9
Z12
Z13
相關PDF資料 |
PDF描述 |
|---|---|
| AGR19090EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19125EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19125EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19K180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。