- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42888 > AGR19090EU L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | AGR19090EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 209K |
| 代理商： | AGR19090EU |
6
Agere Systems Inc.
90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
April 2004
AGR19090E
Preliminary Data Sheet
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, IDQ = 800 mA, pulsed CW, 4 s (on), 40 s (off), center frequency = 1960 MHz.
Figure 4. Pulse CW POUT vs. PIN
Test Conditions:
VDD = 28 Vdc, IDQ = 850 mA, f = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spac-
ing (BW) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz).
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. POUT
43
44
45
46
47
48
49
50
51
52
53
54
55
30
31
32
33
34
35
36
37
38
39
40
41
42
PIN (dBm)Z
P
OU
T(d
B
m
)Z
4
5
6
7
8
9
10
11
12
13
14
15
16
G
PS
(d
B
)Z
P1dB = 50.81 dBm (120.66 W)
P3dB = 51.60 dBm (144.53 W)
POUT
GPS
0
5
10
15
20
25
30
35
40
45
50
110
100
POUT (W) Avg.Z
G
PS
(
d
B
),
η
(%)
Z
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
AC
PR
(dBc
)Z
GPS
885 kHz
2.25 MHz
η
1 MHz
相關PDF資料 |
PDF描述 |
|---|---|
| AGR19090EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19125EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19125EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19K180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。