參數(shù)資料
型號(hào)： AGR19090EU
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁(yè)數(shù)： 4/10頁(yè)
文件大?。?/td> 366K
代理商： AGR19090EU
E
0
9
0
9
1
R
G
A
90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. RF Characteristics
ti
n
U
x
a
M
p
y
T
n
i
M
l
o
b
m
y
S
r
e
t
e
m
a
r
a
P
Dynamic Characteristics
Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
(Part is internally matched both on input and output.)
CRSS
—
2.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain
(VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
GPS
14.5 15.5 —
dB
Drain Efficiency
(VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
—
25.8 —
%
Third-order Intermodulation Distortion
(VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
IM3 measured in a 1.2288 MHz integration BW centered at f1 – 2.5 MHz
and f2 + 2.5 MHz, referenced to the carrier channel power)
IM3
— –34.5 — dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
ACPR measured in a 1.2288 MHz integration BW centered at
f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
ACPR
—
–50 — dBc
Input Return Loss
(VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL
—
–12 —
dB
Output Power at 1 dB Gain Compression
(VDD = 28 V, POUT = 90 W CW, f = 1990 MHz, IDQ = 800 mA)
P1dB
90
95
—
W
Ruggedness
(VDD = 28 V, POUT = 90 W CW, IDQ = 800 mA, f = 1930 MHz,
VSWR = 10:1 [all phase angles])
Ψ
No degradation in output
power.
(in Supplied Test Fixture)
相關(guān)PDF資料
PDF描述
AGR19090EF L BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR19125EF L BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR19125EU L BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR19180EF L BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR19180EF 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AGR19125E 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19125EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR19125EU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19180EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR19K180EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*