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參數(shù)資料
| 型號(hào)： | AGR19090EU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 366K |
| 代理商： | AGR19090EU |
90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
E
0
9
0
9
1
R
G
A
Test Circuit Illustrations for AGR19090E
A. Schematic
B. Component Layout
Parts List:
?
Microstrip line: Z1 0.390 in. x 0.065 in.; Z2 0.300 in. x 0.065 in.; Z3 0.070 in. x 0.065 in.; Z4 0.400 in. x 0.260 in.; Z5 0.100 in. x 0.540 in.;
Z6 0.160 in. x 0.770 in.; Z7 0.275 in. x 1.160 in.; Z8 0.550 in. x 1.130 in.; Z9 0.300 in. x 0.205 in.; Z10 0.120 in. x 0.065 in.;
Z11 0.165 in. x 0.065 in.; Z12 0.555 in. x 0.065 in.; Z13 0.185 in. x 0.030 in.; Z14 0.845 in. x 0.050 in.
?
ATC
B case chip capacitors: C1, C2, 10 pF, 100B100JCA500X; C7, C11, 8.2 pF, 100B8R2CA500X.
?
Sprague
tantalum SMT: C9, C10, C15 22 F, 35 V.
?
Kemet
: B case chip capacitors: C3, C14 0.10 F, CDR33BX104AKWS; tantalum capacitor: C16, 1 F, 50 V T491C.
?
Vitramon
1206: C5,
C12: 22000 pF.
?
Murata
: 0805: C4, C13 0.01 F, GRM40X7R103K100AL.
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0603: C12 220 pF.
?
Johanson Giga-Trim
variable capacitors: C8, C18 0.4 pF—2.5 pF.
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Fixed film chip resistors (0.25 W, 0.08 x 0.13): R2 4.7 Ω; R3 1.02 kΩ; R4 560 kΩ.
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Fair-Rite
ferrite bead: FB1: 2743019447.
?
Taconic
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
Figure 2. AGR19090E Test Circuit
DUT
R2
C10
R4
R3
C3
FB1
Z7
Z1
C1
Z2
Z3
Z4
2
1
C
3
1
C
C11
Z14
4
C
5
C
C14
C7
RF INPUT
VGG
VDD
RF
C8
OUTPUT
1
2
3
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
Z5
Z6
Z8
Z9
Z10
Z11
C2
C16
C15
+
C16
C17
C9
Z12
Z13
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PDF描述 |
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| AGR19090EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| AGR19125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19125EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19125EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19K180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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