參數(shù)資料
型號: AGR21010EU
廠商: LSI CORP
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: SURFACE MOUNT PACKAGE-2
文件頁數(shù): 4/18頁
文件大?。?/td> 504K
代理商: AGR21010EU
12
Agere Systems Inc.
10 W, 2000 MHz, N-Channel E-Mode, Lateral MOSFET
April 2003
AGR21010E
Preliminary Data Sheet
Typical Performance Characteristics, 1930 MHz—1990 MHz (continued)
Figure 10. Gain and POUT vs. PIN (f = 1930 MHz)
Figure 11. Gain and POUT vs. PIN (f = 1960 MHz)
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
42.0
44.0
13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0
PIN (dBm)Z
P
OUT
(dBm)
Z
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
GAIN
(dB)
Z
IDQ = 97 mA, at f = 1930 MHz
POUT
GAIN
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
42.0
44.0
13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0
PIN (dBm)Z
P
OUT
(dBm)
Z
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
GAIN
(dB)
Z
IDQ = 97 mA, at f = 1960 MHz
POUT
GAIN
相關PDF資料
PDF描述
AGR21180EU S BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR21180EU S BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGRA10EU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGRA10EU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AP4532GM 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
AGR21030EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR21045EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR21060E 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21060EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR21060EU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET