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參數(shù)資料
| 型號： | AGR21180EU |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-4 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 603K |
| 代理商： | AGR21180EU |
4
Agere Systems Inc.
180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
November 2003
AGR21180E
Preliminary Data Sheet
Typical Performance Characteristics
(Optimally tuned for 28 Vds, 2 x 800 mA IDQ, POUT = 2 W-CDMA 38 W average operation.)
ZS = Test circuit impedance as measured from gate to gate, balanced configuration.
ZL = Test circuit impedance as measured from drain to drain, balanced configuration.
Figure 3. Series Equivalent Balanced Input and Output Impedances
MHz (f)
ZS
(Complex Source Impedance)
ZL
(Complex Optimum Load Impedance)
2110 (f1)
4.02 – j7.92
3.92 – j6.59
2140 (f2)
3.98 – j7.73
3.79 – j6.32
2170 (f3)
3.80 – j7.63
3.67 – j6.12
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.4
0.6
0.8
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180±
90
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.22
0.23
0.24
0.25
0.26
0.27
0.28
0.29
0.3
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.49
0.0
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RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZS
f3
f1
ZL
f3
f1
Z0 = 10
DUT
1A
1B
3
2A
2B
+
ZS
ZL
–
PINS:
1A. DRAIN
1B. DRAIN
2A. GATE
2B. GATE
3. SOURCE
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